Physical properties of nanostructured ZnO thin films deposited by DC magnetron sputtering method with different volume of O2 in carrier gas
High-quality ZnO thin films with polycrystalline hexagonal structure and (101) preferentially oriented were deposited on Si and corning glass substrates by reactive direct current magnetron sputtering. The effects of different oxygen concentration in carrier gas on structural, morphological and opti...
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University of Belgrade, Technical Faculty, Bor
2019-01-01
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| Series: | Journal of Mining and Metallurgy. Section B: Metallurgy |
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| Online Access: | http://www.doiserbia.nb.rs/img/doi/1450-5339/2019/1450-53391900011A.pdf |
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| author | Asgary Somayeh Ramezani Amir Hoshang Mahmoodi Azam |
| author_facet | Asgary Somayeh Ramezani Amir Hoshang Mahmoodi Azam |
| author_sort | Asgary Somayeh |
| collection | DOAJ |
| description | High-quality ZnO thin films with polycrystalline hexagonal structure and (101) preferentially oriented were deposited on Si and corning glass substrates by reactive direct current magnetron sputtering. The effects of different oxygen concentration in carrier gas on structural, morphological and optical properties have been investigated. The increase of O2 concentration resulted in the decrease of preferred orientation intensity and peak shifting to lower 2θ values. Scanning electron microscopic images showed a porous tapered columnar structure similar to the zone 1 of Thornton’s structure zone model at lower O2 content and a smooth microstructure similar to the zone T structure at highest O2 content. AFM images showed that film morphology and surface roughness were influenced by O2 concentration. UV-Vis-NIR measurements indicated that the UV absorption intensity of samples was increased and shifted to shorter wavelength (blue shift) at higher O2 concentration. Moreover, the optical band gap increased from 3.91 to 4.41 eV as a function of the oxygen concentration. |
| format | Article |
| id | doaj-art-4a57421ece5945e9894db9399fbbc08b |
| institution | Kabale University |
| issn | 1450-5339 2217-7175 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | University of Belgrade, Technical Faculty, Bor |
| record_format | Article |
| series | Journal of Mining and Metallurgy. Section B: Metallurgy |
| spelling | doaj-art-4a57421ece5945e9894db9399fbbc08b2025-02-02T16:34:36ZengUniversity of Belgrade, Technical Faculty, BorJournal of Mining and Metallurgy. Section B: Metallurgy1450-53392217-71752019-01-0155111112010.2298/JMMB180412011A1450-53391900011APhysical properties of nanostructured ZnO thin films deposited by DC magnetron sputtering method with different volume of O2 in carrier gasAsgary Somayeh0Ramezani Amir Hoshang1Mahmoodi Azam2Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, IranDepartment of Physics, West Tehran Branch, Islamic Azad University, Tehran, IranPlasma physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, IranHigh-quality ZnO thin films with polycrystalline hexagonal structure and (101) preferentially oriented were deposited on Si and corning glass substrates by reactive direct current magnetron sputtering. The effects of different oxygen concentration in carrier gas on structural, morphological and optical properties have been investigated. The increase of O2 concentration resulted in the decrease of preferred orientation intensity and peak shifting to lower 2θ values. Scanning electron microscopic images showed a porous tapered columnar structure similar to the zone 1 of Thornton’s structure zone model at lower O2 content and a smooth microstructure similar to the zone T structure at highest O2 content. AFM images showed that film morphology and surface roughness were influenced by O2 concentration. UV-Vis-NIR measurements indicated that the UV absorption intensity of samples was increased and shifted to shorter wavelength (blue shift) at higher O2 concentration. Moreover, the optical band gap increased from 3.91 to 4.41 eV as a function of the oxygen concentration.http://www.doiserbia.nb.rs/img/doi/1450-5339/2019/1450-53391900011A.pdfdc magnetron sputteringporous zno thin filmstructural propertiesmorphological propertiesoptical band gapabsorbance |
| spellingShingle | Asgary Somayeh Ramezani Amir Hoshang Mahmoodi Azam Physical properties of nanostructured ZnO thin films deposited by DC magnetron sputtering method with different volume of O2 in carrier gas Journal of Mining and Metallurgy. Section B: Metallurgy dc magnetron sputtering porous zno thin film structural properties morphological properties optical band gap absorbance |
| title | Physical properties of nanostructured ZnO thin films deposited by DC magnetron sputtering method with different volume of O2 in carrier gas |
| title_full | Physical properties of nanostructured ZnO thin films deposited by DC magnetron sputtering method with different volume of O2 in carrier gas |
| title_fullStr | Physical properties of nanostructured ZnO thin films deposited by DC magnetron sputtering method with different volume of O2 in carrier gas |
| title_full_unstemmed | Physical properties of nanostructured ZnO thin films deposited by DC magnetron sputtering method with different volume of O2 in carrier gas |
| title_short | Physical properties of nanostructured ZnO thin films deposited by DC magnetron sputtering method with different volume of O2 in carrier gas |
| title_sort | physical properties of nanostructured zno thin films deposited by dc magnetron sputtering method with different volume of o2 in carrier gas |
| topic | dc magnetron sputtering porous zno thin film structural properties morphological properties optical band gap absorbance |
| url | http://www.doiserbia.nb.rs/img/doi/1450-5339/2019/1450-53391900011A.pdf |
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