The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology
The calculation and design of an ultralow-power Low Noise Amplifier (LNA) are proposed in this paper. The LNA operates from 5 GHz to 10 GHz, and forward body biasing technique is used to bring down power consumption of the circuit. The design revolves around precise calculations related to input imp...
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| Format: | Article |
| Language: | English |
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Wiley
2020-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2020/8537405 |
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| author | Hemad Heidari Jobaneh |
| author_facet | Hemad Heidari Jobaneh |
| author_sort | Hemad Heidari Jobaneh |
| collection | DOAJ |
| description | The calculation and design of an ultralow-power Low Noise Amplifier (LNA) are proposed in this paper. The LNA operates from 5 GHz to 10 GHz, and forward body biasing technique is used to bring down power consumption of the circuit. The design revolves around precise calculations related to input impedance, output impedance, and the gain of the circuit. MATLAB and Advanced Design System (ADS) are utilized to design and simulate the LNA. In addition, TSMC 0.13 μm CMOS process is used in ADS. The LNA is biased with two different voltage supplies in order to reduce power consumption. Noise Figure (NF), input matching (S11), gain (S21), IIP3, and power dissipation are 1.46 dB–2.27 dB, −11.25 dB, 13.82 dB, −8.5, and 963 μW, respectively. |
| format | Article |
| id | doaj-art-4a308ac6c5e143eeb03d1a753faab0da |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2020-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-4a308ac6c5e143eeb03d1a753faab0da2025-02-03T01:05:09ZengWileyActive and Passive Electronic Components0882-75161563-50312020-01-01202010.1155/2020/85374058537405The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS TechnologyHemad Heidari Jobaneh0Department of Electrical Engineering, Azad University, South Tehran Branch, Tehran, IranThe calculation and design of an ultralow-power Low Noise Amplifier (LNA) are proposed in this paper. The LNA operates from 5 GHz to 10 GHz, and forward body biasing technique is used to bring down power consumption of the circuit. The design revolves around precise calculations related to input impedance, output impedance, and the gain of the circuit. MATLAB and Advanced Design System (ADS) are utilized to design and simulate the LNA. In addition, TSMC 0.13 μm CMOS process is used in ADS. The LNA is biased with two different voltage supplies in order to reduce power consumption. Noise Figure (NF), input matching (S11), gain (S21), IIP3, and power dissipation are 1.46 dB–2.27 dB, −11.25 dB, 13.82 dB, −8.5, and 963 μW, respectively.http://dx.doi.org/10.1155/2020/8537405 |
| spellingShingle | Hemad Heidari Jobaneh The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology Active and Passive Electronic Components |
| title | The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology |
| title_full | The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology |
| title_fullStr | The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology |
| title_full_unstemmed | The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology |
| title_short | The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology |
| title_sort | design of an ultralow power ultra wideband 5 ghz 10 ghz low noise amplifier in 0 13 μm cmos technology |
| url | http://dx.doi.org/10.1155/2020/8537405 |
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