Wafer-scale integration of freestanding photonic devices with color centers in silicon carbide
Abstract Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate photonic devices at scale while maintaining the pr...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-01-01
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| Series: | npj Nanophotonics |
| Online Access: | https://doi.org/10.1038/s44310-024-00049-y |
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| _version_ | 1832585631338856448 |
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| author | Sridhar Majety Victoria A. Norman Pranta Saha Alex H. Rubin Scott Dhuey Marina Radulaski |
| author_facet | Sridhar Majety Victoria A. Norman Pranta Saha Alex H. Rubin Scott Dhuey Marina Radulaski |
| author_sort | Sridhar Majety |
| collection | DOAJ |
| description | Abstract Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate photonic devices at scale while maintaining the properties of quantum emitters. We address this challenge in silicon carbide, which has both commercially available wafer-scale substrates and is a host to color centers with desirable optical and spin properties. Using ion beam etching at an angle, we develop a 5-inch wafer process for the fabrication of triangular cross-section photonic devices in bulk 4H-SiC. The developed process has a variability in etch rate and etch angle of 5.4% and 2.9%, respectively. Furthermore, the integrated color centers maintain their optical properties after the etch, thus achieving the nanofabrication goal of wafer-scale nanofabrication in quantum-grade silicon carbide. |
| format | Article |
| id | doaj-art-48f539e568b24a9e8a5fa9571bcca67b |
| institution | Kabale University |
| issn | 2948-216X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj Nanophotonics |
| spelling | doaj-art-48f539e568b24a9e8a5fa9571bcca67b2025-01-26T12:36:59ZengNature Portfolionpj Nanophotonics2948-216X2025-01-01211710.1038/s44310-024-00049-yWafer-scale integration of freestanding photonic devices with color centers in silicon carbideSridhar Majety0Victoria A. Norman1Pranta Saha2Alex H. Rubin3Scott Dhuey4Marina Radulaski5Department of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaThe Molecular Foundry, Lawrence Berkeley National LaboratoryDepartment of Electrical and Computer Engineering, University of CaliforniaAbstract Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate photonic devices at scale while maintaining the properties of quantum emitters. We address this challenge in silicon carbide, which has both commercially available wafer-scale substrates and is a host to color centers with desirable optical and spin properties. Using ion beam etching at an angle, we develop a 5-inch wafer process for the fabrication of triangular cross-section photonic devices in bulk 4H-SiC. The developed process has a variability in etch rate and etch angle of 5.4% and 2.9%, respectively. Furthermore, the integrated color centers maintain their optical properties after the etch, thus achieving the nanofabrication goal of wafer-scale nanofabrication in quantum-grade silicon carbide.https://doi.org/10.1038/s44310-024-00049-y |
| spellingShingle | Sridhar Majety Victoria A. Norman Pranta Saha Alex H. Rubin Scott Dhuey Marina Radulaski Wafer-scale integration of freestanding photonic devices with color centers in silicon carbide npj Nanophotonics |
| title | Wafer-scale integration of freestanding photonic devices with color centers in silicon carbide |
| title_full | Wafer-scale integration of freestanding photonic devices with color centers in silicon carbide |
| title_fullStr | Wafer-scale integration of freestanding photonic devices with color centers in silicon carbide |
| title_full_unstemmed | Wafer-scale integration of freestanding photonic devices with color centers in silicon carbide |
| title_short | Wafer-scale integration of freestanding photonic devices with color centers in silicon carbide |
| title_sort | wafer scale integration of freestanding photonic devices with color centers in silicon carbide |
| url | https://doi.org/10.1038/s44310-024-00049-y |
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