Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed Silicon
In boron-doped silicon annealed in a plasma ambient (at 150°C), the reported hydrogen concentration profile and the hole profile cannot be simultaneously fitted assuming only one kind of in-diffusing hydrogen ions H+ of a definite parameter D+K (where D+ is the diffusivity of H+ and K is the equilib...
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| Format: | Article |
| Language: | English |
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Wiley
2018-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2018/2385438 |
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| author | Vladimir V. Voronkov |
| author_facet | Vladimir V. Voronkov |
| author_sort | Vladimir V. Voronkov |
| collection | DOAJ |
| description | In boron-doped silicon annealed in a plasma ambient (at 150°C), the reported hydrogen concentration profile and the hole profile cannot be simultaneously fitted assuming only one kind of in-diffusing hydrogen ions H+ of a definite parameter D+K (where D+ is the diffusivity of H+ and K is the equilibrium dissociation constant of the HB defect, the passivated boron). A good fit is possible only assuming two independent kinds of H+—one of a larger value of D+K and the other—of a smaller value. A concept of two independent atomic subsystems H(1) and H(2), each involving both positive and neutral charge states, is also useful to account for hydrogen pairing into dimers. |
| format | Article |
| id | doaj-art-48b0ea04be434a639152ec0cb8244a98 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-48b0ea04be434a639152ec0cb8244a982025-02-03T01:31:58ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422018-01-01201810.1155/2018/23854382385438Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed SiliconVladimir V. Voronkov0SunEdison Semiconductor–Global Wafers, via Nazionale 59, 39012 Merano, ItalyIn boron-doped silicon annealed in a plasma ambient (at 150°C), the reported hydrogen concentration profile and the hole profile cannot be simultaneously fitted assuming only one kind of in-diffusing hydrogen ions H+ of a definite parameter D+K (where D+ is the diffusivity of H+ and K is the equilibrium dissociation constant of the HB defect, the passivated boron). A good fit is possible only assuming two independent kinds of H+—one of a larger value of D+K and the other—of a smaller value. A concept of two independent atomic subsystems H(1) and H(2), each involving both positive and neutral charge states, is also useful to account for hydrogen pairing into dimers.http://dx.doi.org/10.1155/2018/2385438 |
| spellingShingle | Vladimir V. Voronkov Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed Silicon Advances in Materials Science and Engineering |
| title | Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed Silicon |
| title_full | Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed Silicon |
| title_fullStr | Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed Silicon |
| title_full_unstemmed | Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed Silicon |
| title_short | Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed Silicon |
| title_sort | two kinds of hydrogen monomers manifested in plasma exposed silicon |
| url | http://dx.doi.org/10.1155/2018/2385438 |
| work_keys_str_mv | AT vladimirvvoronkov twokindsofhydrogenmonomersmanifestedinplasmaexposedsilicon |