Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed Silicon
In boron-doped silicon annealed in a plasma ambient (at 150°C), the reported hydrogen concentration profile and the hole profile cannot be simultaneously fitted assuming only one kind of in-diffusing hydrogen ions H+ of a definite parameter D+K (where D+ is the diffusivity of H+ and K is the equilib...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2018-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2018/2385438 |
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| Summary: | In boron-doped silicon annealed in a plasma ambient (at 150°C), the reported hydrogen concentration profile and the hole profile cannot be simultaneously fitted assuming only one kind of in-diffusing hydrogen ions H+ of a definite parameter D+K (where D+ is the diffusivity of H+ and K is the equilibrium dissociation constant of the HB defect, the passivated boron). A good fit is possible only assuming two independent kinds of H+—one of a larger value of D+K and the other—of a smaller value. A concept of two independent atomic subsystems H(1) and H(2), each involving both positive and neutral charge states, is also useful to account for hydrogen pairing into dimers. |
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| ISSN: | 1687-8434 1687-8442 |