Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells
This paper presents an experimental and theoretical study on the impact of doping and recombination mechanisms on quantum dot solar cells based on the InAs/GaAs system. Numerical simulations are built on a hybrid approach that includes the quantum features of the charge transfer processes between th...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2018-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2018/7215843 |
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| author | A. P. Cédola D. Kim A. Tibaldi M. Tang A. Khalili J. Wu H. Liu F. Cappelluti |
| author_facet | A. P. Cédola D. Kim A. Tibaldi M. Tang A. Khalili J. Wu H. Liu F. Cappelluti |
| author_sort | A. P. Cédola |
| collection | DOAJ |
| description | This paper presents an experimental and theoretical study on the impact of doping and recombination mechanisms on quantum dot solar cells based on the InAs/GaAs system. Numerical simulations are built on a hybrid approach that includes the quantum features of the charge transfer processes between the nanostructured material and the bulk host material in a classical transport model of the macroscopic continuum. This allows gaining a detailed understanding of the several physical mechanisms affecting the photovoltaic conversion efficiency and provides a quantitatively accurate picture of real devices at a reasonable computational cost. Experimental results demonstrate that QD doping provides a remarkable increase of the solar cell open-circuit voltage, which is explained by the numerical simulations as the result of reduced recombination loss through quantum dots and defects. |
| format | Article |
| id | doaj-art-4894b3dc7b384108b60e868319483098 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-4894b3dc7b384108b60e8683194830982025-02-03T05:46:28ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2018-01-01201810.1155/2018/72158437215843Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar CellsA. P. Cédola0D. Kim1A. Tibaldi2M. Tang3A. Khalili4J. Wu5H. Liu6F. Cappelluti7Department of Electronics and Telecommunications, Corso Duca degli Abruzzi 24, 10129 Torino, ItalyDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UKIstituto di Elettronica e di Ingegneria dell’Informazione e delle Telecomunicazioni (IEIIT), Consiglio Nazionale delle Ricerche (CNR), Corso Duca degli Abruzzi 24, 10129 Torino, ItalyDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UKDepartment of Electronics and Telecommunications, Corso Duca degli Abruzzi 24, 10129 Torino, ItalyDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UKDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UKDepartment of Electronics and Telecommunications, Corso Duca degli Abruzzi 24, 10129 Torino, ItalyThis paper presents an experimental and theoretical study on the impact of doping and recombination mechanisms on quantum dot solar cells based on the InAs/GaAs system. Numerical simulations are built on a hybrid approach that includes the quantum features of the charge transfer processes between the nanostructured material and the bulk host material in a classical transport model of the macroscopic continuum. This allows gaining a detailed understanding of the several physical mechanisms affecting the photovoltaic conversion efficiency and provides a quantitatively accurate picture of real devices at a reasonable computational cost. Experimental results demonstrate that QD doping provides a remarkable increase of the solar cell open-circuit voltage, which is explained by the numerical simulations as the result of reduced recombination loss through quantum dots and defects.http://dx.doi.org/10.1155/2018/7215843 |
| spellingShingle | A. P. Cédola D. Kim A. Tibaldi M. Tang A. Khalili J. Wu H. Liu F. Cappelluti Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells International Journal of Photoenergy |
| title | Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells |
| title_full | Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells |
| title_fullStr | Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells |
| title_full_unstemmed | Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells |
| title_short | Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells |
| title_sort | physics based modeling and experimental study of si doped inas gaas quantum dot solar cells |
| url | http://dx.doi.org/10.1155/2018/7215843 |
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