Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells
The p-GaN/i-InxGa1−xN/n-GaN double-heterostructure photovoltaic (PV) cells have been fabricated and the theoretical photovoltaic properties were also calculated in this work. From theoretical simulation, higher efficiency can be obtained in GaN/InGaN double-heterostructure photovoltaic cells with hi...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/206174 |
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| author | Ming-Hsien Wu Sheng-Po Chang Shoou-Jinn Chang Ray-Hua Horng Wen-Yih Liao Ray-Ming Lin |
| author_facet | Ming-Hsien Wu Sheng-Po Chang Shoou-Jinn Chang Ray-Hua Horng Wen-Yih Liao Ray-Ming Lin |
| author_sort | Ming-Hsien Wu |
| collection | DOAJ |
| description | The p-GaN/i-InxGa1−xN/n-GaN double-heterostructure photovoltaic (PV) cells have been fabricated and the theoretical photovoltaic properties were also calculated in this work. From theoretical simulation, higher efficiency can be obtained in GaN/InGaN double-heterostructure photovoltaic cells with higher In composition in i-InGaN intrinsic layer. GaN/InGaN double-heterostructure photovoltaic cells with In compositions of 10%, 12%, and 14% were fabricated and characterized for demonstrating with the simulated results. The corresponding photoelectrical conversion efficiency of fabricated GaN/InGaN photovoltaic cells with In compositions of 10%, 12%, and 14% is 0.51%, 0.53%, and 0.32% under standard AM 1.5G measurement condition, respectively. GaN/InGaN photovoltaic cells with In composition of 10% showed high open-circuit voltage (Voc) of 2.07 V and fill factor (F.F.) of 80.67%. The decrease of Voc and FF was observed as In composition increasing from 10% to 14%. For comparing with the fabricated GaN/InGaN photovoltaic cells, theoretical conversion efficiency of GaN/InGaN photovoltaic cells with In compositions of 10%, 12%, and 14%, is 1.80%, 2.04%, and 2.27%, respectively. The difference of GaN/InGaN photovoltaic properties between theoretical simulation and experimental measurement could be attributed to the inferior quality of InGaN epilayer and GaN/InGaN interface generated as the increase of In composition. |
| format | Article |
| id | doaj-art-47e70d39bac9458cb29b16133feb439c |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-47e70d39bac9458cb29b16133feb439c2025-02-03T01:01:15ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/206174206174Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic CellsMing-Hsien Wu0Sheng-Po Chang1Shoou-Jinn Chang2Ray-Hua Horng3Wen-Yih Liao4Ray-Ming Lin5Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, TaiwanInstitute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, TaiwanInstitute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, TaiwanGraduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, TaiwanElectronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu 310, TaiwanDepartment of Electronic Engineering, Chang-Gung University, Taoyuan 333, TaiwanThe p-GaN/i-InxGa1−xN/n-GaN double-heterostructure photovoltaic (PV) cells have been fabricated and the theoretical photovoltaic properties were also calculated in this work. From theoretical simulation, higher efficiency can be obtained in GaN/InGaN double-heterostructure photovoltaic cells with higher In composition in i-InGaN intrinsic layer. GaN/InGaN double-heterostructure photovoltaic cells with In compositions of 10%, 12%, and 14% were fabricated and characterized for demonstrating with the simulated results. The corresponding photoelectrical conversion efficiency of fabricated GaN/InGaN photovoltaic cells with In compositions of 10%, 12%, and 14% is 0.51%, 0.53%, and 0.32% under standard AM 1.5G measurement condition, respectively. GaN/InGaN photovoltaic cells with In composition of 10% showed high open-circuit voltage (Voc) of 2.07 V and fill factor (F.F.) of 80.67%. The decrease of Voc and FF was observed as In composition increasing from 10% to 14%. For comparing with the fabricated GaN/InGaN photovoltaic cells, theoretical conversion efficiency of GaN/InGaN photovoltaic cells with In compositions of 10%, 12%, and 14%, is 1.80%, 2.04%, and 2.27%, respectively. The difference of GaN/InGaN photovoltaic properties between theoretical simulation and experimental measurement could be attributed to the inferior quality of InGaN epilayer and GaN/InGaN interface generated as the increase of In composition.http://dx.doi.org/10.1155/2012/206174 |
| spellingShingle | Ming-Hsien Wu Sheng-Po Chang Shoou-Jinn Chang Ray-Hua Horng Wen-Yih Liao Ray-Ming Lin Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells International Journal of Photoenergy |
| title | Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells |
| title_full | Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells |
| title_fullStr | Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells |
| title_full_unstemmed | Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells |
| title_short | Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells |
| title_sort | characteristics of gan ingan double heterostructure photovoltaic cells |
| url | http://dx.doi.org/10.1155/2012/206174 |
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