Interpretation of the piezoelectric photothermal spectra of p-type silicon samples
This paper presents both experimental and theoretical amplitude and phase piezoelectric photothermal spectra (PPTS) of p-type silicon samples. two dominant peaks at 1.07 eV and 1.18 eV were observed in PPT spectra at room temperature. The relative intensities of these peaks change by...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Fundamental Technological Research Polish Academy of Sciences
2003-01-01
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| Series: | Archives of Acoustics |
| Online Access: | https://acoustics.ippt.pan.pl/index.php/aa/article/view/452 |
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| Summary: | This paper presents both experimental and theoretical
amplitude and phase piezoelectric photothermal spectra (PPTS) of p-type silicon
samples. two dominant peaks at 1.07 eV and 1.18 eV were observed in PPT spectra
at room temperature. The relative intensities of these peaks change by a surface
treatment. Numerical analysis is performed by supposing that an inactive layer
exists at the sample surface. The characteristic structure observed in the
piezoelectric amplitude spectra of p-Si samples is well explained by the model
proposed for multilayer structure. We found that the proposed inactive layer
model is quite helpful in investigating the surface properties of a
semiconductor material. |
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| ISSN: | 0137-5075 2300-262X |