Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate
The 150 nm thick, (0001) orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm) template/(0001) sapphire substrate. The indium (x) concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/980639 |
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| author | Engin Arslan Pakize Demirel Huseyin Çakmak Mustafa K. Öztürk Ekmel Ozbay |
| author_facet | Engin Arslan Pakize Demirel Huseyin Çakmak Mustafa K. Öztürk Ekmel Ozbay |
| author_sort | Engin Arslan |
| collection | DOAJ |
| description | The 150 nm thick, (0001) orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm) template/(0001) sapphire substrate. The indium (x) concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The Indium content (x), lattice parameters, and strain values in the AlInN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10–15) reflection of the AlInN and GaN layers. The mosaic structure characteristics of the AlInN layers, such as lateral and vertical coherence lengths, tilt and twist angle, heterogeneous strain, and dislocation densities (edge and screw type dislocations) of the AlInN epilayers, were investigated by using high-resolution X-ray diffraction measurements and with a combination of Williamson-Hall plot and the fitting of twist angles. |
| format | Article |
| id | doaj-art-470992d8a3fa44f2bcd0a9a0ba7c9fc8 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-470992d8a3fa44f2bcd0a9a0ba7c9fc82025-02-03T01:09:05ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/980639980639Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire SubstrateEngin Arslan0Pakize Demirel1Huseyin Çakmak2Mustafa K. Öztürk3Ekmel Ozbay4Nanotechnology Research Center (NANOTAM), Department of Physics, Bilkent University, 06800 Ankara, TurkeyNanotechnology Research Center (NANOTAM), Department of Physics, Bilkent University, 06800 Ankara, TurkeyNanotechnology Research Center (NANOTAM), Department of Physics, Bilkent University, 06800 Ankara, TurkeyDepartment of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500 Ankara, TurkeyNanotechnology Research Center (NANOTAM), Department of Physics, Bilkent University, 06800 Ankara, TurkeyThe 150 nm thick, (0001) orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm) template/(0001) sapphire substrate. The indium (x) concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The Indium content (x), lattice parameters, and strain values in the AlInN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10–15) reflection of the AlInN and GaN layers. The mosaic structure characteristics of the AlInN layers, such as lateral and vertical coherence lengths, tilt and twist angle, heterogeneous strain, and dislocation densities (edge and screw type dislocations) of the AlInN epilayers, were investigated by using high-resolution X-ray diffraction measurements and with a combination of Williamson-Hall plot and the fitting of twist angles.http://dx.doi.org/10.1155/2014/980639 |
| spellingShingle | Engin Arslan Pakize Demirel Huseyin Çakmak Mustafa K. Öztürk Ekmel Ozbay Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate Advances in Materials Science and Engineering |
| title | Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate |
| title_full | Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate |
| title_fullStr | Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate |
| title_full_unstemmed | Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate |
| title_short | Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate |
| title_sort | mosaic structure characterization of the alinn layer grown on sapphire substrate |
| url | http://dx.doi.org/10.1155/2014/980639 |
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