High-Performance Hydrogen Sensing at Room Temperature via Nb-Doped Titanium Oxide Thin Films Fabricated by Micro-Arc Oxidation

High-Performance Hydrogen Sensing at Room Temperature via Nb-Doped Titanium Oxide Thin Films Fabricated by Micro-Arc Oxidation

Metal oxide semiconductor (MOS) hydrogen sensors offer advantages, such as high sensitivity and fast response, but their challenges remain in achieving low-cost fabrication and stable operation at room temperature. This study investigates Nb-doped TiO<sub>2</sub> (NTO) thin films prepare...

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Bibliographic Details
Main Authors: Chilou Zhou, Zhiqiu Ye, Yue Tan, Zhenghua Wu, Xinyi Guo, Yinglin Bai, Xuying Xie, Zilong Wu, Ji’an Feng, Yao Xu, Bo Deng, Hao Wu
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Nanomaterials
Subjects:
micro-arc oxidation
hydrogen sensor
Nb-doped titanium oxide
semiconductor
Online Access:https://www.mdpi.com/2079-4991/15/2/124
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