Topological electronic structure and transport properties of the distorted rutile-type WO2

We elucidate the transport properties and electronic structures of distorted rutile-type WO2. Electrical resistivity and Hall effect measurements of high-quality single crystals revealed the transport property characteristics of topological materials; these characteristics included an extremely larg...

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Main Authors: Yuto Muramatsu, Daigorou Hirai, Mitsuaki Kawamura, Susumu Minami, Yoshitaka Ikeda, Takahiro Shimada, Keita Kojima, Naoyuki Katayama, Koshi Takenaka
Format: Article
Language:English
Published: AIP Publishing LLC 2025-01-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0233482
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author Yuto Muramatsu
Daigorou Hirai
Mitsuaki Kawamura
Susumu Minami
Yoshitaka Ikeda
Takahiro Shimada
Keita Kojima
Naoyuki Katayama
Koshi Takenaka
author_facet Yuto Muramatsu
Daigorou Hirai
Mitsuaki Kawamura
Susumu Minami
Yoshitaka Ikeda
Takahiro Shimada
Keita Kojima
Naoyuki Katayama
Koshi Takenaka
author_sort Yuto Muramatsu
collection DOAJ
description We elucidate the transport properties and electronic structures of distorted rutile-type WO2. Electrical resistivity and Hall effect measurements of high-quality single crystals revealed the transport property characteristics of topological materials; these characteristics included an extremely large magnetoresistance of 13 200% (2 K and 9 T) and a very high carrier mobility of 25 700 cm2 V−1 s−1 (5 K). First-principles calculations revealed Dirac nodal lines (DNLs) near the Fermi energy in the electronic structure when spin–orbit interactions (SOIs) were absent. Although these DNLs mostly disappeared in the presence of SOIs, band crossings at high-symmetry points in the reciprocal space existed as Dirac points. Furthermore, DNLs protected by nonsymmorphic symmetry persisted on the ky = π/b plane. The unique transport properties originating from the topological electronic structure of chemically and thermally stable WO2 could represent an opportunity to investigate the potential electronic applications of the material.
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institution Kabale University
issn 2166-532X
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series APL Materials
spelling doaj-art-4551bfb0521848e9a68f62feee060b152025-02-03T16:42:31ZengAIP Publishing LLCAPL Materials2166-532X2025-01-01131011119011119-810.1063/5.0233482Topological electronic structure and transport properties of the distorted rutile-type WO2Yuto Muramatsu0Daigorou Hirai1Mitsuaki Kawamura2Susumu Minami3Yoshitaka Ikeda4Takahiro Shimada5Keita Kojima6Naoyuki Katayama7Koshi Takenaka8Department of Applied Physics, Nagoya University, Nagoya 464-8603, JapanDepartment of Applied Physics, Nagoya University, Nagoya 464-8603, JapanInformation Technology Center, University of Tokyo, Bunkyo-ku, Tokyo 113-8658, JapanDepartment of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, JapanDepartment of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, JapanDepartment of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, JapanInstitute for Solid State Physics, the University of Tokyo, Kashiwa 277-8581, JapanDepartment of Applied Physics, Nagoya University, Nagoya 464-8603, JapanDepartment of Applied Physics, Nagoya University, Nagoya 464-8603, JapanWe elucidate the transport properties and electronic structures of distorted rutile-type WO2. Electrical resistivity and Hall effect measurements of high-quality single crystals revealed the transport property characteristics of topological materials; these characteristics included an extremely large magnetoresistance of 13 200% (2 K and 9 T) and a very high carrier mobility of 25 700 cm2 V−1 s−1 (5 K). First-principles calculations revealed Dirac nodal lines (DNLs) near the Fermi energy in the electronic structure when spin–orbit interactions (SOIs) were absent. Although these DNLs mostly disappeared in the presence of SOIs, band crossings at high-symmetry points in the reciprocal space existed as Dirac points. Furthermore, DNLs protected by nonsymmorphic symmetry persisted on the ky = π/b plane. The unique transport properties originating from the topological electronic structure of chemically and thermally stable WO2 could represent an opportunity to investigate the potential electronic applications of the material.http://dx.doi.org/10.1063/5.0233482
spellingShingle Yuto Muramatsu
Daigorou Hirai
Mitsuaki Kawamura
Susumu Minami
Yoshitaka Ikeda
Takahiro Shimada
Keita Kojima
Naoyuki Katayama
Koshi Takenaka
Topological electronic structure and transport properties of the distorted rutile-type WO2
APL Materials
title Topological electronic structure and transport properties of the distorted rutile-type WO2
title_full Topological electronic structure and transport properties of the distorted rutile-type WO2
title_fullStr Topological electronic structure and transport properties of the distorted rutile-type WO2
title_full_unstemmed Topological electronic structure and transport properties of the distorted rutile-type WO2
title_short Topological electronic structure and transport properties of the distorted rutile-type WO2
title_sort topological electronic structure and transport properties of the distorted rutile type wo2
url http://dx.doi.org/10.1063/5.0233482
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