Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer
We developed a monolithically integrated device consisting of a single GaN LED and two p-GaN-depletion MOSFETs on a GaN LED epitaxial layer. The p-GaN-depletion MOSFETs exhibited a subthreshold slope of 1 V/decade and a threshold voltage of –2 V, whereas the LED exhibited a forward voltag...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10668404/ |
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