Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer

Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer

We developed a monolithically integrated device consisting of a single GaN LED and two p-GaN-depletion MOSFETs on a GaN LED epitaxial layer. The p-GaN-depletion MOSFETs exhibited a subthreshold slope of 1 V/decade and a threshold voltage of –2 V, whereas the LED exhibited a forward voltag...

Full description

Saved in:
Bibliographic Details
Main Authors: Boseong Son, Huijin Kim, Young-Woong Lee, Purusottam Reddy Bommireddy, Si-Hyun Park
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Wafer-scale monolithic integration
p-GaN-depletion MOSFET
GaN LED
micro-LED displays
Online Access:https://ieeexplore.ieee.org/document/10668404/
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://ieeexplore.ieee.org/document/10668404/

Similar Items