Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer
We developed a monolithically integrated device consisting of a single GaN LED and two p-GaN-depletion MOSFETs on a GaN LED epitaxial layer. The p-GaN-depletion MOSFETs exhibited a subthreshold slope of 1 V/decade and a threshold voltage of –2 V, whereas the LED exhibited a forward voltag...
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| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10668404/ |
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| author | Boseong Son Huijin Kim Young-Woong Lee Purusottam Reddy Bommireddy Si-Hyun Park |
| author_facet | Boseong Son Huijin Kim Young-Woong Lee Purusottam Reddy Bommireddy Si-Hyun Park |
| author_sort | Boseong Son |
| collection | DOAJ |
| description | We developed a monolithically integrated device consisting of a single GaN LED and two p-GaN-depletion MOSFETs on a GaN LED epitaxial layer. The p-GaN-depletion MOSFETs exhibited a subthreshold slope of 1 V/decade and a threshold voltage of –2 V, whereas the LED exhibited a forward voltage of 3.5 V at 1 mA and an electroluminescence peak of 445 nm. The device could be controlled by the scan voltage, with <inline-formula> <tex-math notation="LaTeX">$V_{DD}$ </tex-math></inline-formula> ranging from 1 to 2 V, and cut off the total current with an applied scan voltage greater than 3 V. This work represents an important step towards the monolithic integration of LED and transistors for use in active-matrix micro-LED displays. |
| format | Article |
| id | doaj-art-44f7e96cd5e84144b47ace29ba1494a8 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-44f7e96cd5e84144b47ace29ba1494a82025-01-29T00:00:31ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011290591110.1109/JEDS.2024.345525610668404Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial LayerBoseong Son0https://orcid.org/0000-0002-6863-745XHuijin Kim1https://orcid.org/0009-0000-5390-2014Young-Woong Lee2Purusottam Reddy Bommireddy3https://orcid.org/0000-0002-1100-7895Si-Hyun Park4https://orcid.org/0000-0001-7106-7913Department of Electronic Engineering, Yeungnam University, Gyeongsan, Republic of KoreaDepartment of Electronic Engineering, Yeungnam University, Gyeongsan, Republic of KoreaDepartment of Electronic Engineering, Yeungnam University, Gyeongsan, Republic of KoreaDepartment of Electronic Engineering, Yeungnam University, Gyeongsan, Republic of KoreaDepartment of Electronic Engineering, Yeungnam University, Gyeongsan, Republic of KoreaWe developed a monolithically integrated device consisting of a single GaN LED and two p-GaN-depletion MOSFETs on a GaN LED epitaxial layer. The p-GaN-depletion MOSFETs exhibited a subthreshold slope of 1 V/decade and a threshold voltage of –2 V, whereas the LED exhibited a forward voltage of 3.5 V at 1 mA and an electroluminescence peak of 445 nm. The device could be controlled by the scan voltage, with <inline-formula> <tex-math notation="LaTeX">$V_{DD}$ </tex-math></inline-formula> ranging from 1 to 2 V, and cut off the total current with an applied scan voltage greater than 3 V. This work represents an important step towards the monolithic integration of LED and transistors for use in active-matrix micro-LED displays.https://ieeexplore.ieee.org/document/10668404/Wafer-scale monolithic integrationp-GaN-depletion MOSFETGaN LEDmicro-LED displays |
| spellingShingle | Boseong Son Huijin Kim Young-Woong Lee Purusottam Reddy Bommireddy Si-Hyun Park Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer IEEE Journal of the Electron Devices Society Wafer-scale monolithic integration p-GaN-depletion MOSFET GaN LED micro-LED displays |
| title | Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer |
| title_full | Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer |
| title_fullStr | Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer |
| title_full_unstemmed | Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer |
| title_short | Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer |
| title_sort | wafer scale monolithic integration of leds with p gan depletion mosfets on a gan led epitaxial layer |
| topic | Wafer-scale monolithic integration p-GaN-depletion MOSFET GaN LED micro-LED displays |
| url | https://ieeexplore.ieee.org/document/10668404/ |
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