Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer
We developed a monolithically integrated device consisting of a single GaN LED and two p-GaN-depletion MOSFETs on a GaN LED epitaxial layer. The p-GaN-depletion MOSFETs exhibited a subthreshold slope of 1 V/decade and a threshold voltage of –2 V, whereas the LED exhibited a forward voltag...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10668404/ |
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| Summary: | We developed a monolithically integrated device consisting of a single GaN LED and two p-GaN-depletion MOSFETs on a GaN LED epitaxial layer. The p-GaN-depletion MOSFETs exhibited a subthreshold slope of 1 V/decade and a threshold voltage of –2 V, whereas the LED exhibited a forward voltage of 3.5 V at 1 mA and an electroluminescence peak of 445 nm. The device could be controlled by the scan voltage, with <inline-formula> <tex-math notation="LaTeX">$V_{DD}$ </tex-math></inline-formula> ranging from 1 to 2 V, and cut off the total current with an applied scan voltage greater than 3 V. This work represents an important step towards the monolithic integration of LED and transistors for use in active-matrix micro-LED displays. |
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| ISSN: | 2168-6734 |