QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS

QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS

There were investigated the capacity-voltage characteristics of the MOS transistors, fabricated by the similar process charts, with the identical applied technological materials), however at various time (appropriately further in the text series A and series B). It was shown, that the measurements o...

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Bibliographic Details
Main Authors: V. B. Odzhaev, A. N. Pyatlitski, V. S. Prosolovich, V. A. Filipenya, S. V. Shvedau, V. V. Chernyi, V. Yu. Yavid, Yu. N. Yankouski
Format: Article
Language:English
Published: Belarusian National Technical University 2015-08-01
Series:Приборы и методы измерений
Subjects:
capacity-voltage
mos-transistor
technological admixtures
Online Access:https://pimi.bntu.by/jour/article/view/211
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