Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources
Abstract The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilitie...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-87602-7 |
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| author | Kali Prasanna Mondal Mengjia Gaowei Elena Echeverria Kenneth Evans-Lutterodt Jean Jordan-Sweet Thomas Juffmann Siddharth Karkare Jared Maxson S. J. van der Molen Chad Pennington Pallavi Saha John Smedley W. G. Stam Rudolf M. Tromp |
| author_facet | Kali Prasanna Mondal Mengjia Gaowei Elena Echeverria Kenneth Evans-Lutterodt Jean Jordan-Sweet Thomas Juffmann Siddharth Karkare Jared Maxson S. J. van der Molen Chad Pennington Pallavi Saha John Smedley W. G. Stam Rudolf M. Tromp |
| author_sort | Kali Prasanna Mondal |
| collection | DOAJ |
| description | Abstract The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents the first demonstration of the growth of highly crystalized and epitaxial cesium telluride thin films on 4H-SiC and graphene/4H-SiC substrates with ultrasmooth film surfaces. The ordering of the film was characterized by in situ reflection high energy electron diffraction and multiple X-ray diagnostics. The results of the quantum efficiency performance for epitaxial cesium telluride photocathodes are also reported. |
| format | Article |
| id | doaj-art-43c9587a20bb41ee832aa5bce30468fc |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-43c9587a20bb41ee832aa5bce30468fc2025-02-02T12:18:39ZengNature PortfolioScientific Reports2045-23222025-01-0115111110.1038/s41598-025-87602-7Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sourcesKali Prasanna Mondal0Mengjia Gaowei1Elena Echeverria2Kenneth Evans-Lutterodt3Jean Jordan-Sweet4Thomas Juffmann5Siddharth Karkare6Jared Maxson7S. J. van der Molen8Chad Pennington9Pallavi Saha10John Smedley11W. G. Stam12Rudolf M. Tromp13Brookhaven National LaboratoryBrookhaven National LaboratoryCornell University Laboratory for Accelerator-Based Sciences and EducationBrookhaven National LaboratoryBrookhaven National LaboratoryFaculty of Physics, VCQ, University of ViennaArizona State UniversityCornell University Laboratory for Accelerator-Based Sciences and EducationLeiden Institute of Physics, Leiden UniversityCornell University Laboratory for Accelerator-Based Sciences and EducationBrookhaven National LaboratoryBrookhaven National LaboratoryLeiden Institute of Physics, Leiden UniversityIBM T. J. Watson Research CenterAbstract The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents the first demonstration of the growth of highly crystalized and epitaxial cesium telluride thin films on 4H-SiC and graphene/4H-SiC substrates with ultrasmooth film surfaces. The ordering of the film was characterized by in situ reflection high energy electron diffraction and multiple X-ray diagnostics. The results of the quantum efficiency performance for epitaxial cesium telluride photocathodes are also reported.https://doi.org/10.1038/s41598-025-87602-7 |
| spellingShingle | Kali Prasanna Mondal Mengjia Gaowei Elena Echeverria Kenneth Evans-Lutterodt Jean Jordan-Sweet Thomas Juffmann Siddharth Karkare Jared Maxson S. J. van der Molen Chad Pennington Pallavi Saha John Smedley W. G. Stam Rudolf M. Tromp Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources Scientific Reports |
| title | Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources |
| title_full | Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources |
| title_fullStr | Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources |
| title_full_unstemmed | Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources |
| title_short | Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources |
| title_sort | pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources |
| url | https://doi.org/10.1038/s41598-025-87602-7 |
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