Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources

Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources

Abstract The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilitie...

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Main Authors: Kali Prasanna Mondal, Mengjia Gaowei, Elena Echeverria, Kenneth Evans-Lutterodt, Jean Jordan-Sweet, Thomas Juffmann, Siddharth Karkare, Jared Maxson, S. J. van der Molen, Chad Pennington, Pallavi Saha, John Smedley, W. G. Stam, Rudolf M. Tromp
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-025-87602-7
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Summary:Abstract The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents the first demonstration of the growth of highly crystalized and epitaxial cesium telluride thin films on 4H-SiC and graphene/4H-SiC substrates with ultrasmooth film surfaces. The ordering of the film was characterized by in situ reflection high energy electron diffraction and multiple X-ray diagnostics. The results of the quantum efficiency performance for epitaxial cesium telluride photocathodes are also reported.
ISSN:2045-2322

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