Improved Efficiency of Flexible Organic Light-Emitting Diodes by Insertion of Ultrathin SiO2 Buffer Layers
An ultrathin hole-injection buffer layer (HBL) using silicon dioxide (SiO2) by electron beam evaporation in flexible organic light-emitting diode (FOLED) has been fabricated. While the current of the device at constant driving voltage decreases as increasing SiO2 thickness. Compared to the different...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/437304 |
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| _version_ | 1832549645541179392 |
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| author | Chien-Jung Huang Kan-Lin Chen Po-Wen Sze Wen-Ray Chen Teen-Hang Meen Shi-Lun Wu |
| author_facet | Chien-Jung Huang Kan-Lin Chen Po-Wen Sze Wen-Ray Chen Teen-Hang Meen Shi-Lun Wu |
| author_sort | Chien-Jung Huang |
| collection | DOAJ |
| description | An ultrathin hole-injection buffer layer (HBL) using silicon dioxide (SiO2) by electron beam evaporation in flexible organic light-emitting diode (FOLED) has been fabricated. While the current of the device at constant driving voltage decreases as increasing SiO2 thickness. Compared to the different thicknesses of the buffer layer, the FOLED with the buffer layer of 4 nm showed the highest luminous efficiency. The atomic force microscopy (AFM) investigation of indium tin oxide (ITO)/SiO2 topography reveals changes at the interface between SiO2 and N,N′-bis-(1-naphthl)-diphenyl-1,1′-bipheny-4,4′-diamine (NPB), resulting in ultrathin SiO2 layers being a clear advantage for a FOLED. However, the SiO2 can be expected to be a good buffer layer material and thus enhance the emission performance of the FOLED. |
| format | Article |
| id | doaj-art-43afb6985b2e4731b53aedaea046dacd |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-43afb6985b2e4731b53aedaea046dacd2025-02-03T06:10:51ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/437304437304Improved Efficiency of Flexible Organic Light-Emitting Diodes by Insertion of Ultrathin SiO2 Buffer LayersChien-Jung Huang0Kan-Lin Chen1Po-Wen Sze2Wen-Ray Chen3Teen-Hang Meen4Shi-Lun Wu5Department of Applied Physics, National University of Kaohsiung, Kaohsiung 81148, TaiwanDepartment of Electronic Engineering, Fortune Institute of Technology, Kaohsiung 83160, TaiwanDepartment of Electro-Optical Science and Engineering, Kao Yuan University, Kaohsiung 82151, TaiwanDepartment of Electronic Engineering, National Formosa University, Hu-Wei, Yunlin 63201, TaiwanDepartment of Electronic Engineering, National Formosa University, Hu-Wei, Yunlin 63201, TaiwanDepartment of Electrical Engineering, Southern Taiwan University of Technology, Tainan 71005, TaiwanAn ultrathin hole-injection buffer layer (HBL) using silicon dioxide (SiO2) by electron beam evaporation in flexible organic light-emitting diode (FOLED) has been fabricated. While the current of the device at constant driving voltage decreases as increasing SiO2 thickness. Compared to the different thicknesses of the buffer layer, the FOLED with the buffer layer of 4 nm showed the highest luminous efficiency. The atomic force microscopy (AFM) investigation of indium tin oxide (ITO)/SiO2 topography reveals changes at the interface between SiO2 and N,N′-bis-(1-naphthl)-diphenyl-1,1′-bipheny-4,4′-diamine (NPB), resulting in ultrathin SiO2 layers being a clear advantage for a FOLED. However, the SiO2 can be expected to be a good buffer layer material and thus enhance the emission performance of the FOLED.http://dx.doi.org/10.1155/2013/437304 |
| spellingShingle | Chien-Jung Huang Kan-Lin Chen Po-Wen Sze Wen-Ray Chen Teen-Hang Meen Shi-Lun Wu Improved Efficiency of Flexible Organic Light-Emitting Diodes by Insertion of Ultrathin SiO2 Buffer Layers International Journal of Photoenergy |
| title | Improved Efficiency of Flexible Organic Light-Emitting Diodes by Insertion of Ultrathin SiO2 Buffer Layers |
| title_full | Improved Efficiency of Flexible Organic Light-Emitting Diodes by Insertion of Ultrathin SiO2 Buffer Layers |
| title_fullStr | Improved Efficiency of Flexible Organic Light-Emitting Diodes by Insertion of Ultrathin SiO2 Buffer Layers |
| title_full_unstemmed | Improved Efficiency of Flexible Organic Light-Emitting Diodes by Insertion of Ultrathin SiO2 Buffer Layers |
| title_short | Improved Efficiency of Flexible Organic Light-Emitting Diodes by Insertion of Ultrathin SiO2 Buffer Layers |
| title_sort | improved efficiency of flexible organic light emitting diodes by insertion of ultrathin sio2 buffer layers |
| url | http://dx.doi.org/10.1155/2013/437304 |
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