Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors
This paper presents a machine-learning-based approach for the degradation modeling of hot carrier injection in metal-oxide-semiconductor field-effect transistors (MOSFETs). Stress measurement data have been employed at various stress conditions of both n- and p-MOSFETs with different channel geometr...
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Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2024-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10477498/ |
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