Enhancing the density of silicon carbide with the addition of nitrate-based additives
Dense monolithic silicon carbide (SiC) was successfully sintered by hot pressing at 1750ºC for 1 h under an applied pressure of 20 MPa with the addition of a nitrate-based additive. With the addition of MgO-Y2O3 and Al2O3-Y2O3 in nitrate form, a relative density of more than 98% was achieved, while...
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| Format: | Article |
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University of Belgrade, Technical Faculty, Bor
2022-01-01
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| Series: | Journal of Mining and Metallurgy. Section B: Metallurgy |
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| Online Access: | http://www.doiserbia.nb.rs/img/doi/1450-5339/2022/1450-53392200020D.pdf |
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| author | Dioktyanto M. Aryanto D. Noviyanto A. Yuwono A.H. Rochman N.T. |
| author_facet | Dioktyanto M. Aryanto D. Noviyanto A. Yuwono A.H. Rochman N.T. |
| author_sort | Dioktyanto M. |
| collection | DOAJ |
| description | Dense monolithic silicon carbide (SiC) was successfully sintered by hot pressing at 1750ºC for 1 h under an applied pressure of 20 MPa with the addition of a nitrate-based additive. With the addition of MgO-Y2O3 and Al2O3-Y2O3 in nitrate form, a relative density of more than 98% was achieved, while in the oxide form it was 85.0 and 96.0%, respectively. In fact, MgO-Y2O3 showed poor densification due to the eutectic temperature of 2110ºC, however, the addition of the nitrate form of MgO-Y2O3 greatly enhanced the densification. The sintering mechanism in the nitrate-based additive is liquid phase sintering, identified by the presence of an oxide phase, i.e., Y2O3 in the SiC with the addition of Al2O3-Y2O3 in nitrate form. Moreover, the addition of nitrate form suppressed the grain growth of SiC, which was believed to be due to the adequate rearrangement stage during sintering. |
| format | Article |
| id | doaj-art-4226819766bb412da9e7a07e3e5a3e57 |
| institution | Kabale University |
| issn | 1450-5339 2217-7175 |
| language | English |
| publishDate | 2022-01-01 |
| publisher | University of Belgrade, Technical Faculty, Bor |
| record_format | Article |
| series | Journal of Mining and Metallurgy. Section B: Metallurgy |
| spelling | doaj-art-4226819766bb412da9e7a07e3e5a3e572025-02-03T07:49:32ZengUniversity of Belgrade, Technical Faculty, BorJournal of Mining and Metallurgy. Section B: Metallurgy1450-53392217-71752022-01-0158338939510.2298/JMMB220215020D1450-53392200020DEnhancing the density of silicon carbide with the addition of nitrate-based additivesDioktyanto M.0Aryanto D.1Noviyanto A.2Yuwono A.H.3Rochman N.T.4Universitas Indonesia, Faculty of Engineering, Department of Metallurgical and Materials Engineering, Kampus UI Depok, Indonesia + Nano Center Indonesia, Jl. PUSPIPTEK, Tangerang Selatan, IndonesiaNational Research and Innovation Agency, Research Center for Advanced Materials, PUSPIPTEK, Tangerang Selatan, Indonesia Nano Center Indonesia, Jl. PUSPIPTEK, Tangerang Selatan, Indonesia + Mercu Buana University, Department of Mechanical Engineering, Jl. Meruya Selatan, Kebun Jeruk, IndonesiaUniversitas Indonesia, Faculty of Engineering, Department of Metallurgical and Materials Engineering, Kampus UI Depok, Indonesia National Research and Innovation Agency, Research Center for Advanced Materials, PUSPIPTEK, Tangerang Selatan, IndonesiaDense monolithic silicon carbide (SiC) was successfully sintered by hot pressing at 1750ºC for 1 h under an applied pressure of 20 MPa with the addition of a nitrate-based additive. With the addition of MgO-Y2O3 and Al2O3-Y2O3 in nitrate form, a relative density of more than 98% was achieved, while in the oxide form it was 85.0 and 96.0%, respectively. In fact, MgO-Y2O3 showed poor densification due to the eutectic temperature of 2110ºC, however, the addition of the nitrate form of MgO-Y2O3 greatly enhanced the densification. The sintering mechanism in the nitrate-based additive is liquid phase sintering, identified by the presence of an oxide phase, i.e., Y2O3 in the SiC with the addition of Al2O3-Y2O3 in nitrate form. Moreover, the addition of nitrate form suppressed the grain growth of SiC, which was believed to be due to the adequate rearrangement stage during sintering.http://www.doiserbia.nb.rs/img/doi/1450-5339/2022/1450-53392200020D.pdfsilicon carbidenitrateoxidesintering additivedensity |
| spellingShingle | Dioktyanto M. Aryanto D. Noviyanto A. Yuwono A.H. Rochman N.T. Enhancing the density of silicon carbide with the addition of nitrate-based additives Journal of Mining and Metallurgy. Section B: Metallurgy silicon carbide nitrate oxide sintering additive density |
| title | Enhancing the density of silicon carbide with the addition of nitrate-based additives |
| title_full | Enhancing the density of silicon carbide with the addition of nitrate-based additives |
| title_fullStr | Enhancing the density of silicon carbide with the addition of nitrate-based additives |
| title_full_unstemmed | Enhancing the density of silicon carbide with the addition of nitrate-based additives |
| title_short | Enhancing the density of silicon carbide with the addition of nitrate-based additives |
| title_sort | enhancing the density of silicon carbide with the addition of nitrate based additives |
| topic | silicon carbide nitrate oxide sintering additive density |
| url | http://www.doiserbia.nb.rs/img/doi/1450-5339/2022/1450-53392200020D.pdf |
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