Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta Multilayers
Ultrahigh anomalous Hall sensitivity has been demonstrated in Ta/CoFe/Oxide/Ta multilayers. By changing oxides (MgO and HfO2) and annealing temperature, different annealing dependence of sensitivity was found in MgO-sample and HfO2-sample. For the MgO-sample, the anomalous Hall sensitivity reaches 1...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2016-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2016/9734610 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832559758662434816 |
|---|---|
| author | Guang Yang Yongye Li Xi Chen Jingyan Zhang Guanghua Yu |
| author_facet | Guang Yang Yongye Li Xi Chen Jingyan Zhang Guanghua Yu |
| author_sort | Guang Yang |
| collection | DOAJ |
| description | Ultrahigh anomalous Hall sensitivity has been demonstrated in Ta/CoFe/Oxide/Ta multilayers. By changing oxides (MgO and HfO2) and annealing temperature, different annealing dependence of sensitivity was found in MgO-sample and HfO2-sample. For the MgO-sample, the anomalous Hall sensitivity reaches 18792 Ω/T in the as-deposited state and significantly reduces as annealing temperature increases. On the contrary, the sensitivity of the as-deposited HfO2-sample is only 765 Ω/T, while it remarkably increases with annealing temperature increasing, finally reaching 14741 Ω/T at 240°C. The opposite variation of anomalous sensitivity in two samples originates from the different change of magnetic anisotropy and anomalous Hall resistance during the annealing process. Our study provides a new perspective that both the choice of oxide material and the optimization of annealing treatment are important to the anomalous Hall sensitivity. |
| format | Article |
| id | doaj-art-42095bdea8164dc88db713282be1ce18 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-42095bdea8164dc88db713282be1ce182025-02-03T01:29:15ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242016-01-01201610.1155/2016/97346109734610Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta MultilayersGuang Yang0Yongye Li1Xi Chen2Jingyan Zhang3Guanghua Yu4Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, ChinaDepartment of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, ChinaDepartment of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, ChinaDepartment of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, ChinaDepartment of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, ChinaUltrahigh anomalous Hall sensitivity has been demonstrated in Ta/CoFe/Oxide/Ta multilayers. By changing oxides (MgO and HfO2) and annealing temperature, different annealing dependence of sensitivity was found in MgO-sample and HfO2-sample. For the MgO-sample, the anomalous Hall sensitivity reaches 18792 Ω/T in the as-deposited state and significantly reduces as annealing temperature increases. On the contrary, the sensitivity of the as-deposited HfO2-sample is only 765 Ω/T, while it remarkably increases with annealing temperature increasing, finally reaching 14741 Ω/T at 240°C. The opposite variation of anomalous sensitivity in two samples originates from the different change of magnetic anisotropy and anomalous Hall resistance during the annealing process. Our study provides a new perspective that both the choice of oxide material and the optimization of annealing treatment are important to the anomalous Hall sensitivity.http://dx.doi.org/10.1155/2016/9734610 |
| spellingShingle | Guang Yang Yongye Li Xi Chen Jingyan Zhang Guanghua Yu Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta Multilayers Advances in Condensed Matter Physics |
| title | Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta Multilayers |
| title_full | Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta Multilayers |
| title_fullStr | Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta Multilayers |
| title_full_unstemmed | Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta Multilayers |
| title_short | Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta Multilayers |
| title_sort | ultrasensitive anomalous hall effect in ta cofe oxide ta multilayers |
| url | http://dx.doi.org/10.1155/2016/9734610 |
| work_keys_str_mv | AT guangyang ultrasensitiveanomaloushalleffectintacofeoxidetamultilayers AT yongyeli ultrasensitiveanomaloushalleffectintacofeoxidetamultilayers AT xichen ultrasensitiveanomaloushalleffectintacofeoxidetamultilayers AT jingyanzhang ultrasensitiveanomaloushalleffectintacofeoxidetamultilayers AT guanghuayu ultrasensitiveanomaloushalleffectintacofeoxidetamultilayers |