Local Tuning of the Epsilon‐Near‐Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser Annealing

Local Tuning of the Epsilon‐Near‐Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser Annealing

The ability for locally tuning devices in photonic integrated circuits could be an essential function for a wide range of applications requiring reconfigurable photonics. This work demonstrates the application of postgrowth reactive laser annealing to selectively tune the optical properties of tin‐d...

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Bibliographic Details
Main Authors: Juan Navarro‐Arenas, Thomas M. Howe, Jorge Parra, Demosthenes C. Koutsogeorgis, James A. Hillier, Nikolaos Kalfagiannis, Pablo Sanchis
Format: Article
Language:English
Published: Wiley-VCH 2025-06-01
Series:Advanced Photonics Research
Subjects:
epsilon‐near‐zero
hybrid silicon waveguide
indium tin oxide
laser annealing
silicon photonics
transparent conducting oxides
Online Access:https://doi.org/10.1002/adpr.202400140
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