Local Tuning of the Epsilon‐Near‐Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser Annealing
The ability for locally tuning devices in photonic integrated circuits could be an essential function for a wide range of applications requiring reconfigurable photonics. This work demonstrates the application of postgrowth reactive laser annealing to selectively tune the optical properties of tin‐d...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-06-01
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| Series: | Advanced Photonics Research |
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| Online Access: | https://doi.org/10.1002/adpr.202400140 |
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| author | Juan Navarro‐Arenas Thomas M. Howe Jorge Parra Demosthenes C. Koutsogeorgis James A. Hillier Nikolaos Kalfagiannis Pablo Sanchis |
| author_facet | Juan Navarro‐Arenas Thomas M. Howe Jorge Parra Demosthenes C. Koutsogeorgis James A. Hillier Nikolaos Kalfagiannis Pablo Sanchis |
| author_sort | Juan Navarro‐Arenas |
| collection | DOAJ |
| description | The ability for locally tuning devices in photonic integrated circuits could be an essential function for a wide range of applications requiring reconfigurable photonics. This work demonstrates the application of postgrowth reactive laser annealing to selectively tune the optical properties of tin‐doped indium oxide (ITO) patches integrated in silicon waveguides. ITO stands out due to its distinctive ability to operate in the epsilon‐near‐zero (ENZ) regime at near‐infrared wavelengths. The precise local tuning of the ENZ wavelength in ITO/Si hybrid waveguides by controlling the laser annealing fluence is demonstrated. This technique uniquely allows for the customization of optical constants at critical telecom wavelengths. The findings present a powerful and adaptable method to exploit the exceptional qualities of ITO and, by extension, other transparent conducting oxides, paving the way for the functional diversification of hybrid photonic devices on a singular‐silicon chip. |
| format | Article |
| id | doaj-art-4127a05ee2ea4524b85e8f4e4ec34aa2 |
| institution | OA Journals |
| issn | 2699-9293 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Photonics Research |
| spelling | doaj-art-4127a05ee2ea4524b85e8f4e4ec34aa22025-08-20T02:23:48ZengWiley-VCHAdvanced Photonics Research2699-92932025-06-0166n/an/a10.1002/adpr.202400140Local Tuning of the Epsilon‐Near‐Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser AnnealingJuan Navarro‐Arenas0Thomas M. Howe1Jorge Parra2Demosthenes C. Koutsogeorgis3James A. Hillier4Nikolaos Kalfagiannis5Pablo Sanchis6Nanophotonics Technology Center Universitat Politècnica de València Camino de Vera s/n 46022 Valencia SpainSchool of Science and Technology Department of Physics and Mathematics Nottingham Trent University Clifton Campus Nottingham NG11 8NS UKNanophotonics Technology Center Universitat Politècnica de València Camino de Vera s/n 46022 Valencia SpainSchool of Science and Technology Department of Physics and Mathematics Nottingham Trent University Clifton Campus Nottingham NG11 8NS UKEindhoven Hendrik Casimir Institute Eindhoven University of Technology 5600 MB Eindhoven The NetherlandsSchool of Science and Technology Department of Physics and Mathematics Nottingham Trent University Clifton Campus Nottingham NG11 8NS UKNanophotonics Technology Center Universitat Politècnica de València Camino de Vera s/n 46022 Valencia SpainThe ability for locally tuning devices in photonic integrated circuits could be an essential function for a wide range of applications requiring reconfigurable photonics. This work demonstrates the application of postgrowth reactive laser annealing to selectively tune the optical properties of tin‐doped indium oxide (ITO) patches integrated in silicon waveguides. ITO stands out due to its distinctive ability to operate in the epsilon‐near‐zero (ENZ) regime at near‐infrared wavelengths. The precise local tuning of the ENZ wavelength in ITO/Si hybrid waveguides by controlling the laser annealing fluence is demonstrated. This technique uniquely allows for the customization of optical constants at critical telecom wavelengths. The findings present a powerful and adaptable method to exploit the exceptional qualities of ITO and, by extension, other transparent conducting oxides, paving the way for the functional diversification of hybrid photonic devices on a singular‐silicon chip.https://doi.org/10.1002/adpr.202400140epsilon‐near‐zerohybrid silicon waveguideindium tin oxidelaser annealingsilicon photonicstransparent conducting oxides |
| spellingShingle | Juan Navarro‐Arenas Thomas M. Howe Jorge Parra Demosthenes C. Koutsogeorgis James A. Hillier Nikolaos Kalfagiannis Pablo Sanchis Local Tuning of the Epsilon‐Near‐Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser Annealing Advanced Photonics Research epsilon‐near‐zero hybrid silicon waveguide indium tin oxide laser annealing silicon photonics transparent conducting oxides |
| title | Local Tuning of the Epsilon‐Near‐Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser Annealing |
| title_full | Local Tuning of the Epsilon‐Near‐Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser Annealing |
| title_fullStr | Local Tuning of the Epsilon‐Near‐Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser Annealing |
| title_full_unstemmed | Local Tuning of the Epsilon‐Near‐Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser Annealing |
| title_short | Local Tuning of the Epsilon‐Near‐Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser Annealing |
| title_sort | local tuning of the epsilon near zero condition in hybrid silicon waveguides using reactive laser annealing |
| topic | epsilon‐near‐zero hybrid silicon waveguide indium tin oxide laser annealing silicon photonics transparent conducting oxides |
| url | https://doi.org/10.1002/adpr.202400140 |
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