Electronic Origin of Defect States in Fe-Doped LiNbO3 Ferroelectrics

We investigate the role of Fe in the electronic structure of ferroelectric LiNbO3 by density-functional theory calculations. We show that Fe2+ on the Li site (Fe2+Li) features a displacement opposite to the direction of spontaneous polarization and acts as a trigger for the bulk photovoltaic (PV) ef...

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Main Authors: Yuji Noguchi, Ryotaro Inoue, Masaru Miyayama
Format: Article
Language:English
Published: Wiley 2016-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2016/2943173
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author Yuji Noguchi
Ryotaro Inoue
Masaru Miyayama
author_facet Yuji Noguchi
Ryotaro Inoue
Masaru Miyayama
author_sort Yuji Noguchi
collection DOAJ
description We investigate the role of Fe in the electronic structure of ferroelectric LiNbO3 by density-functional theory calculations. We show that Fe2+ on the Li site (Fe2+Li) features a displacement opposite to the direction of spontaneous polarization and acts as a trigger for the bulk photovoltaic (PV) effect. In contrast to Fe3+ on the Li site that forms the defect states (1e, a, and 2e) below the conduction band minimum, the reduction from Fe3+ to Fe2+ accompanied by a lattice relaxation markedly lowers only the a state (dz2) owing to a strong orbital hybridization with Nb-4d. The a state of Fe2+Li provides the highest electron-occupied defect state in the middle of the band gap. A reduction treatment of Fe-LN is expected to increase the concentration of Fe2+ and therefore to enhance the PV effect under visible light illumination.
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spelling doaj-art-4095700aae574816be68f8125a2e8ed82025-02-03T05:46:20ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242016-01-01201610.1155/2016/29431732943173Electronic Origin of Defect States in Fe-Doped LiNbO3 FerroelectricsYuji Noguchi0Ryotaro Inoue1Masaru Miyayama2Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JapanDivision of Physics, Institute of Liberal Education, School of Medicine, Nihon University, 30-1 Ooyaguchi-kamicho, Itabashi-ku, Tokyo 173-8610, JapanDepartment of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JapanWe investigate the role of Fe in the electronic structure of ferroelectric LiNbO3 by density-functional theory calculations. We show that Fe2+ on the Li site (Fe2+Li) features a displacement opposite to the direction of spontaneous polarization and acts as a trigger for the bulk photovoltaic (PV) effect. In contrast to Fe3+ on the Li site that forms the defect states (1e, a, and 2e) below the conduction band minimum, the reduction from Fe3+ to Fe2+ accompanied by a lattice relaxation markedly lowers only the a state (dz2) owing to a strong orbital hybridization with Nb-4d. The a state of Fe2+Li provides the highest electron-occupied defect state in the middle of the band gap. A reduction treatment of Fe-LN is expected to increase the concentration of Fe2+ and therefore to enhance the PV effect under visible light illumination.http://dx.doi.org/10.1155/2016/2943173
spellingShingle Yuji Noguchi
Ryotaro Inoue
Masaru Miyayama
Electronic Origin of Defect States in Fe-Doped LiNbO3 Ferroelectrics
Advances in Condensed Matter Physics
title Electronic Origin of Defect States in Fe-Doped LiNbO3 Ferroelectrics
title_full Electronic Origin of Defect States in Fe-Doped LiNbO3 Ferroelectrics
title_fullStr Electronic Origin of Defect States in Fe-Doped LiNbO3 Ferroelectrics
title_full_unstemmed Electronic Origin of Defect States in Fe-Doped LiNbO3 Ferroelectrics
title_short Electronic Origin of Defect States in Fe-Doped LiNbO3 Ferroelectrics
title_sort electronic origin of defect states in fe doped linbo3 ferroelectrics
url http://dx.doi.org/10.1155/2016/2943173
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AT ryotaroinoue electronicoriginofdefectstatesinfedopedlinbo3ferroelectrics
AT masarumiyayama electronicoriginofdefectstatesinfedopedlinbo3ferroelectrics