EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS
The advantages of using an atomic force microscopy in manufacturing of submicron integrated circuits are described. The possibilities of characterizing the surface morphology and the etching profile for silicon substrate and bus lines, estimation of the periodicity and size of bus lines, geometrical...
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Belarusian National Technical University
2015-03-01
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Series: | Приборы и методы измерений |
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Online Access: | https://pimi.bntu.by/jour/article/view/9 |
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author | S. A. Chizhik S. P. Basalaev V. A. Pilipenko A. L. Khudoley T. A. Kuznetsova V. V. Chikunov A. A. Suslov |
author_facet | S. A. Chizhik S. P. Basalaev V. A. Pilipenko A. L. Khudoley T. A. Kuznetsova V. V. Chikunov A. A. Suslov |
author_sort | S. A. Chizhik |
collection | DOAJ |
description | The advantages of using an atomic force microscopy in manufacturing of submicron integrated circuits are described. The possibilities of characterizing the surface morphology and the etching profile for silicon substrate and bus lines, estimation of the periodicity and size of bus lines, geometrical stability for elementary bus line are shown. Methods of optical and atomic force microcopies are combined in one diagnostic unit. Scanning probe microscope (SPM 200) is designed and produced. Complex SPM 200 realizes nondestructive control of microelectronics elements made on silicon wafers up to 200 mm in diameter and it is introduced by JSC «Integral» for the purpose of operational control, metrology and acceptance of the final product. |
format | Article |
id | doaj-art-408ee0692c8747e48f6e10e224eed5eb |
institution | Kabale University |
issn | 2220-9506 2414-0473 |
language | English |
publishDate | 2015-03-01 |
publisher | Belarusian National Technical University |
record_format | Article |
series | Приборы и методы измерений |
spelling | doaj-art-408ee0692c8747e48f6e10e224eed5eb2025-02-03T11:37:44ZengBelarusian National Technical UniversityПриборы и методы измерений2220-95062414-04732015-03-010114183EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITSS. A. Chizhik0S. P. Basalaev1V. A. Pilipenko2A. L. Khudoley3T. A. Kuznetsova4V. V. Chikunov5A. A. Suslov6Институт тепло- и массообмена им. А.В. Лыкова НАН БеларусиОАО «Оптоэлектронные системы», г. МинскНТЦ «Белмикросистемы» ОАО «Интеграл», г. МинскИнститут тепло- и массообмена им. А.В. Лыкова НАН БеларусиИнститут тепло- и массообмена им. А.В. Лыкова НАН БеларусиИнститут тепло- и массообмена им. А.В. Лыкова НАН БеларусиОДО «Микротестмашины», г. ГомельThe advantages of using an atomic force microscopy in manufacturing of submicron integrated circuits are described. The possibilities of characterizing the surface morphology and the etching profile for silicon substrate and bus lines, estimation of the periodicity and size of bus lines, geometrical stability for elementary bus line are shown. Methods of optical and atomic force microcopies are combined in one diagnostic unit. Scanning probe microscope (SPM 200) is designed and produced. Complex SPM 200 realizes nondestructive control of microelectronics elements made on silicon wafers up to 200 mm in diameter and it is introduced by JSC «Integral» for the purpose of operational control, metrology and acceptance of the final product.https://pimi.bntu.by/jour/article/view/9submicron topology controloptic and atomic force microscopy |
spellingShingle | S. A. Chizhik S. P. Basalaev V. A. Pilipenko A. L. Khudoley T. A. Kuznetsova V. V. Chikunov A. A. Suslov EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS Приборы и методы измерений submicron topology control optic and atomic force microscopy |
title | EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS |
title_full | EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS |
title_fullStr | EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS |
title_full_unstemmed | EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS |
title_short | EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS |
title_sort | equipment for nondestructive testing of silicon wafers submicron topology during the fabrication of integrated circuits |
topic | submicron topology control optic and atomic force microscopy |
url | https://pimi.bntu.by/jour/article/view/9 |
work_keys_str_mv | AT sachizhik equipmentfornondestructivetestingofsiliconwaferssubmicrontopologyduringthefabricationofintegratedcircuits AT spbasalaev equipmentfornondestructivetestingofsiliconwaferssubmicrontopologyduringthefabricationofintegratedcircuits AT vapilipenko equipmentfornondestructivetestingofsiliconwaferssubmicrontopologyduringthefabricationofintegratedcircuits AT alkhudoley equipmentfornondestructivetestingofsiliconwaferssubmicrontopologyduringthefabricationofintegratedcircuits AT takuznetsova equipmentfornondestructivetestingofsiliconwaferssubmicrontopologyduringthefabricationofintegratedcircuits AT vvchikunov equipmentfornondestructivetestingofsiliconwaferssubmicrontopologyduringthefabricationofintegratedcircuits AT aasuslov equipmentfornondestructivetestingofsiliconwaferssubmicrontopologyduringthefabricationofintegratedcircuits |