Voltage Reference and Voltage Regulator for the Cryogenic Performance Evaluation of the 22nm FDSOI Technology
This paper presents the design and cryogenic electrical characterization of a voltage reference and a linear voltage regulator at temperatures between 6 K and 300 K. Both circuits are employed as test vehicles for the experimental performance evaluation of the 22 nm FDSOI MOS technology when used as...
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| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Open Journal of Circuits and Systems |
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| Online Access: | https://ieeexplore.ieee.org/document/10801233/ |
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| author | Alfonso R. Cabrera-Galicia Arun Ashok Patrick Vliex Andre Kruth Andre Zambanini Stefan van Waasen |
| author_facet | Alfonso R. Cabrera-Galicia Arun Ashok Patrick Vliex Andre Kruth Andre Zambanini Stefan van Waasen |
| author_sort | Alfonso R. Cabrera-Galicia |
| collection | DOAJ |
| description | This paper presents the design and cryogenic electrical characterization of a voltage reference and a linear voltage regulator at temperatures between 6 K and 300 K. Both circuits are employed as test vehicles for the experimental performance evaluation of the 22 nm FDSOI MOS technology when used as platform for the development of cryogenic analog systems, whose role is relevant in Quantum Computing (QC) applications. Additionally, we report the impact that MOS transistor cryogenic phenomena have over these circuits and propose to take advantage of some of those phenomena in analog circuit design. In particular, we focus on the cryogenic threshold voltage <inline-formula> <tex-math notation="LaTeX">$(V_{\text {th}})$ </tex-math></inline-formula> saturation, the transconductance <inline-formula> <tex-math notation="LaTeX">$(g_{m})$ </tex-math></inline-formula> increase and the low frequency (LF) excess noise. Our experimental results indicate that the cryogenic <inline-formula> <tex-math notation="LaTeX">$V_{\text {th}}$ </tex-math></inline-formula> saturation and the <inline-formula> <tex-math notation="LaTeX">$g_{m}$ </tex-math></inline-formula> increase can be used as circuit design tools, while the LF excess noise is a performance handicap for cryogenic analog circuits. |
| format | Article |
| id | doaj-art-4085bf467bef4d14842d3b9c6ceb5555 |
| institution | Kabale University |
| issn | 2644-1225 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Open Journal of Circuits and Systems |
| spelling | doaj-art-4085bf467bef4d14842d3b9c6ceb55552025-01-21T00:02:48ZengIEEEIEEE Open Journal of Circuits and Systems2644-12252024-01-01537738610.1109/OJCAS.2024.346639510801233Voltage Reference and Voltage Regulator for the Cryogenic Performance Evaluation of the 22nm FDSOI TechnologyAlfonso R. Cabrera-Galicia0https://orcid.org/0009-0003-5088-6487Arun Ashok1https://orcid.org/0000-0001-5683-4352Patrick Vliex2https://orcid.org/0000-0002-7193-7402Andre Kruth3https://orcid.org/0000-0002-6273-8778Andre Zambanini4https://orcid.org/0000-0002-1585-4397Stefan van Waasen5https://orcid.org/0000-0003-0682-7941Central Institute of Engineering, Electronics and Analytics, Electronics Systems (ZEA-2), Forschungszentrum Jülich GmbH, Jülich, GermanyCentral Institute of Engineering, Electronics and Analytics, Electronics Systems (ZEA-2), Forschungszentrum Jülich GmbH, Jülich, GermanyCentral Institute of Engineering, Electronics and Analytics, Electronics Systems (ZEA-2), Forschungszentrum Jülich GmbH, Jülich, GermanyCentral Institute of Engineering, Electronics and Analytics, Electronics Systems (ZEA-2), Forschungszentrum Jülich GmbH, Jülich, GermanyCentral Institute of Engineering, Electronics and Analytics, Electronics Systems (ZEA-2), Forschungszentrum Jülich GmbH, Jülich, GermanyCentral Institute of Engineering, Electronics and Analytics, Electronics Systems (ZEA-2), Forschungszentrum Jülich GmbH, Jülich, GermanyThis paper presents the design and cryogenic electrical characterization of a voltage reference and a linear voltage regulator at temperatures between 6 K and 300 K. Both circuits are employed as test vehicles for the experimental performance evaluation of the 22 nm FDSOI MOS technology when used as platform for the development of cryogenic analog systems, whose role is relevant in Quantum Computing (QC) applications. Additionally, we report the impact that MOS transistor cryogenic phenomena have over these circuits and propose to take advantage of some of those phenomena in analog circuit design. In particular, we focus on the cryogenic threshold voltage <inline-formula> <tex-math notation="LaTeX">$(V_{\text {th}})$ </tex-math></inline-formula> saturation, the transconductance <inline-formula> <tex-math notation="LaTeX">$(g_{m})$ </tex-math></inline-formula> increase and the low frequency (LF) excess noise. Our experimental results indicate that the cryogenic <inline-formula> <tex-math notation="LaTeX">$V_{\text {th}}$ </tex-math></inline-formula> saturation and the <inline-formula> <tex-math notation="LaTeX">$g_{m}$ </tex-math></inline-formula> increase can be used as circuit design tools, while the LF excess noise is a performance handicap for cryogenic analog circuits.https://ieeexplore.ieee.org/document/10801233/Cryogenicsfully depleted silicon-on-insulator (FDSOI)low-frequency noisemetal-oxide-semiconductor (MOS)quantum computingvoltage reference |
| spellingShingle | Alfonso R. Cabrera-Galicia Arun Ashok Patrick Vliex Andre Kruth Andre Zambanini Stefan van Waasen Voltage Reference and Voltage Regulator for the Cryogenic Performance Evaluation of the 22nm FDSOI Technology IEEE Open Journal of Circuits and Systems Cryogenics fully depleted silicon-on-insulator (FDSOI) low-frequency noise metal-oxide-semiconductor (MOS) quantum computing voltage reference |
| title | Voltage Reference and Voltage Regulator for the Cryogenic Performance Evaluation of the 22nm FDSOI Technology |
| title_full | Voltage Reference and Voltage Regulator for the Cryogenic Performance Evaluation of the 22nm FDSOI Technology |
| title_fullStr | Voltage Reference and Voltage Regulator for the Cryogenic Performance Evaluation of the 22nm FDSOI Technology |
| title_full_unstemmed | Voltage Reference and Voltage Regulator for the Cryogenic Performance Evaluation of the 22nm FDSOI Technology |
| title_short | Voltage Reference and Voltage Regulator for the Cryogenic Performance Evaluation of the 22nm FDSOI Technology |
| title_sort | voltage reference and voltage regulator for the cryogenic performance evaluation of the 22nm fdsoi technology |
| topic | Cryogenics fully depleted silicon-on-insulator (FDSOI) low-frequency noise metal-oxide-semiconductor (MOS) quantum computing voltage reference |
| url | https://ieeexplore.ieee.org/document/10801233/ |
| work_keys_str_mv | AT alfonsorcabreragalicia voltagereferenceandvoltageregulatorforthecryogenicperformanceevaluationofthe22nmfdsoitechnology AT arunashok voltagereferenceandvoltageregulatorforthecryogenicperformanceevaluationofthe22nmfdsoitechnology AT patrickvliex voltagereferenceandvoltageregulatorforthecryogenicperformanceevaluationofthe22nmfdsoitechnology AT andrekruth voltagereferenceandvoltageregulatorforthecryogenicperformanceevaluationofthe22nmfdsoitechnology AT andrezambanini voltagereferenceandvoltageregulatorforthecryogenicperformanceevaluationofthe22nmfdsoitechnology AT stefanvanwaasen voltagereferenceandvoltageregulatorforthecryogenicperformanceevaluationofthe22nmfdsoitechnology |