Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation
Reactive pulsed laser ablation is a very interesting method to deposit thin films of several materials and compounds such as oxides, nitrides, semiconductors and superconductors. This technique relies on photoablation of pure elements, or a mixture of materials, with simultaneous exposure to a react...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2001-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/S1110662X01000289 |
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| Summary: | Reactive pulsed laser ablation is a very interesting method to deposit thin films of several
materials and compounds such as oxides, nitrides, semiconductors and superconductors. This technique
relies on photoablation of pure elements, or a mixture of materials, with simultaneous exposure to a reactive
atmosphere. In the case of oxides, reactions between the laser vaporized metals and oxygen lead to the
formation of intermediate complexes and finally to oxide thin films. The reactivity of the plume has been
already studied by our group in other oxides and nitrides productions and ascertained by Time of Flight
Mass Spectrometry measurements [1]. |
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| ISSN: | 1110-662X |