Novel Cerium‐Based p‐Dopants with Low Parasitic Absorption for Improved Organic Devices
Abstract High electrical conductivity and improved charge carrier injection enabled by molecular doping are pivotal for high‐performance, energy‐efficient, and stable organic optoelectronic devices. Molecular doping is a key element in device design and manufacturing of active‐matrix organic light‐e...
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Wiley
2025-04-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202414959 |
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| author | Stephanie A. Buchholtz L. Conrad Winkler Maximilian F. X. Dorfner Fred Kretschmer Anncharlott Kusber Léonard Y. M. Eymann Theresa Schmidt Hans Kleemann Johannes Benduhn Frank Ortmann Karl Leo |
| author_facet | Stephanie A. Buchholtz L. Conrad Winkler Maximilian F. X. Dorfner Fred Kretschmer Anncharlott Kusber Léonard Y. M. Eymann Theresa Schmidt Hans Kleemann Johannes Benduhn Frank Ortmann Karl Leo |
| author_sort | Stephanie A. Buchholtz |
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| description | Abstract High electrical conductivity and improved charge carrier injection enabled by molecular doping are pivotal for high‐performance, energy‐efficient, and stable organic optoelectronic devices. Molecular doping is a key element in device design and manufacturing of active‐matrix organic light‐emitting diode displays, a multi‐billion dollar market. However, it is an inherent feature of state‐of‐the‐art small molecule dopants and their charge‐transfer complexes to strongly absorb in the visible and near‐infrared spectral range. This parasitic effect results in absorption losses, reducing the performance in light‐harvesting and light‐emitting applications. Here, a novel class of vacuum‐processable cerium‐based p‐dopants with excellent processing properties and competitive doping strength even in organic hole transport layers with low‐lying valence levels is presented. A substantial reduction in parasitic absorption for layers doped by the new dopants in the visible and near‐infrared range is found. The reduced polaron absorption of the dopant anions is in excellent agreement with theoretical simulations. By incorporating these dopants into near‐infrared narrowband organic photodetectors, the specific detectivity can be increased by one order of magnitude compared to devices with the established dopant 1,3,4,5,7,8‐hexafluorotetracyanonaphthoquinodimethane (F6‐TCNNQ). The decreased parasitic absorption yields optical‐microcavity‐enhanced photodetectors with significantly reduced full‐width at half maximum, paving the way toward more efficient and wavelength‐selective infrared detectors. |
| format | Article |
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| issn | 2198-3844 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley |
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| series | Advanced Science |
| spelling | doaj-art-3f9ba6c6e3bb4cd5b65d4184e3cc8d752025-08-20T02:09:32ZengWileyAdvanced Science2198-38442025-04-011214n/an/a10.1002/advs.202414959Novel Cerium‐Based p‐Dopants with Low Parasitic Absorption for Improved Organic DevicesStephanie A. Buchholtz0L. Conrad Winkler1Maximilian F. X. Dorfner2Fred Kretschmer3Anncharlott Kusber4Léonard Y. M. Eymann5Theresa Schmidt6Hans Kleemann7Johannes Benduhn8Frank Ortmann9Karl Leo10Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute of Applied Physics Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden GermanyDresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute of Applied Physics Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden GermanyDepartment of Chemistry TUM School of Natural Sciences Technische Universität München Lichtenbergstr. 4 85748 Garching GermanyDresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute of Applied Physics Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden GermanyDresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute of Applied Physics Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden GermanyCREDOXYS GmbH Institute for Applied Physics Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden GermanyCREDOXYS GmbH Institute for Applied Physics Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden GermanyDresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute of Applied Physics Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden GermanyDresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute of Applied Physics Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden GermanyDepartment of Chemistry TUM School of Natural Sciences Technische Universität München Lichtenbergstr. 4 85748 Garching GermanyDresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute of Applied Physics Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden GermanyAbstract High electrical conductivity and improved charge carrier injection enabled by molecular doping are pivotal for high‐performance, energy‐efficient, and stable organic optoelectronic devices. Molecular doping is a key element in device design and manufacturing of active‐matrix organic light‐emitting diode displays, a multi‐billion dollar market. However, it is an inherent feature of state‐of‐the‐art small molecule dopants and their charge‐transfer complexes to strongly absorb in the visible and near‐infrared spectral range. This parasitic effect results in absorption losses, reducing the performance in light‐harvesting and light‐emitting applications. Here, a novel class of vacuum‐processable cerium‐based p‐dopants with excellent processing properties and competitive doping strength even in organic hole transport layers with low‐lying valence levels is presented. A substantial reduction in parasitic absorption for layers doped by the new dopants in the visible and near‐infrared range is found. The reduced polaron absorption of the dopant anions is in excellent agreement with theoretical simulations. By incorporating these dopants into near‐infrared narrowband organic photodetectors, the specific detectivity can be increased by one order of magnitude compared to devices with the established dopant 1,3,4,5,7,8‐hexafluorotetracyanonaphthoquinodimethane (F6‐TCNNQ). The decreased parasitic absorption yields optical‐microcavity‐enhanced photodetectors with significantly reduced full‐width at half maximum, paving the way toward more efficient and wavelength‐selective infrared detectors.https://doi.org/10.1002/advs.202414959dopinghole transport layersorganic photodetectorsorganic semiconductorsUV–vis–NIR absorption |
| spellingShingle | Stephanie A. Buchholtz L. Conrad Winkler Maximilian F. X. Dorfner Fred Kretschmer Anncharlott Kusber Léonard Y. M. Eymann Theresa Schmidt Hans Kleemann Johannes Benduhn Frank Ortmann Karl Leo Novel Cerium‐Based p‐Dopants with Low Parasitic Absorption for Improved Organic Devices Advanced Science doping hole transport layers organic photodetectors organic semiconductors UV–vis–NIR absorption |
| title | Novel Cerium‐Based p‐Dopants with Low Parasitic Absorption for Improved Organic Devices |
| title_full | Novel Cerium‐Based p‐Dopants with Low Parasitic Absorption for Improved Organic Devices |
| title_fullStr | Novel Cerium‐Based p‐Dopants with Low Parasitic Absorption for Improved Organic Devices |
| title_full_unstemmed | Novel Cerium‐Based p‐Dopants with Low Parasitic Absorption for Improved Organic Devices |
| title_short | Novel Cerium‐Based p‐Dopants with Low Parasitic Absorption for Improved Organic Devices |
| title_sort | novel cerium based p dopants with low parasitic absorption for improved organic devices |
| topic | doping hole transport layers organic photodetectors organic semiconductors UV–vis–NIR absorption |
| url | https://doi.org/10.1002/advs.202414959 |
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