Structural and Electrical Characteristics of Metal-Ferroelectric Pb1.1(Zr0.40Ti0.60)O3-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications
In this work metal-ferroelectric-insulator-semiconductor (MFIS) thin-film structures using Pb1.1Zr0.40Ti0.60O3 (PZT) as the ferroelectric layer and zinc oxide (ZnO) as the insulator layer were fabricated on n-type (100) Si substrate. Pb1.1Zr0.40Ti0.60O3 and ZnO thin films were prepared on Si by the...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2013/692364 |
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