Se-mediated dry transfer of wafer-scale 2D semiconductors for advanced electronics
Abstract Two-dimensional (2D) semiconductors hold a great promise for next-generation electronics. Yet, achieving a clean and intact transfer of 2D films on device-compatible substrates remains a critical challenge. Here, we report an approach that uses selenium (Se) as the intermediate layer to fac...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-05-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-59803-1 |
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| Summary: | Abstract Two-dimensional (2D) semiconductors hold a great promise for next-generation electronics. Yet, achieving a clean and intact transfer of 2D films on device-compatible substrates remains a critical challenge. Here, we report an approach that uses selenium (Se) as the intermediate layer to facilitate the transfer of wafer-scale molybdenum disulfide (MoS2) monolayers on target substrates with high surface/interface cleanness and structural integrity. Our method enables nearly 100% film intactness of the transferred 2D semiconductors which are free from residues or contaminants. Characterizations reveal that the Se-assisted dry-transfer yields MoS2 film with superior quality compared to conventional transfer techniques. The fabricated field-effect transistors (FETs) and logic circuits based on these transferred films demonstrate remarkable electrical performance, including on/off current ratios up to 2.7×1010 and electron mobility of 71.3 cm2·V-1·s-1 for individual FETs. Our results underscore the feasibility of this dry-transfer technology for fabricating high-performance 2D electronics that are fully compatible with standard semiconductor processes, paving the way for integrating 2D materials into advanced electronic applications. |
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| ISSN: | 2041-1723 |