A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology
This paper presents an ultrawideband low-noise amplifier chip using TSMC 0.18 μm CMOS technology. We propose a UWB low noise amplifier (LNA) for low-voltage and low-power application. The present UWB LNA leads to a better performance in terms of isolation, chip size, and power consumption for low su...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2013/953498 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832566605974863872 |
|---|---|
| author | Jun-Da Chen |
| author_facet | Jun-Da Chen |
| author_sort | Jun-Da Chen |
| collection | DOAJ |
| description | This paper presents an ultrawideband low-noise amplifier chip using TSMC 0.18 μm CMOS technology. We propose a UWB low noise amplifier (LNA) for low-voltage and low-power application. The present UWB LNA leads to a better performance in terms of isolation, chip size, and power consumption for low supply voltage. This UWB LNA is designed based on a current-reused topology, and a simplified RLC circuit is used to achieve the input broadband matching. Output impedance introduces the LC matching method to reduce power consumption. The measured results of the proposed LNA show an average power gain (S21) of 9 dB with the 3 dB band from 3 to 5.6 GHz. The input reflection coefficient (S11) less than −9 dB is from 3 to 11 GHz. The output reflection coefficient (S22) less than −8 dB is from 3 to 7.5 GHz. The noise figure 4.6–5.3 dB is from 3 to 5.6 GHz. Input third-order-intercept point (IIP3) of 2 dBm is at 5.3 GHz. The dc power consumption of this LNA is 9 mW under the supply of a 1 V supply voltage. The chip size of the CMOS UWB LNA is 1.03×0.78 mm2 in total. |
| format | Article |
| id | doaj-art-3ee61803693d457aa531f6cd70beef98 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-3ee61803693d457aa531f6cd70beef982025-02-03T01:03:39ZengWileyActive and Passive Electronic Components0882-75161563-50312013-01-01201310.1155/2013/953498953498A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS TechnologyJun-Da Chen0National Quemoy University, Department of Electronic Engineering, University Road, Jinning Township, Kinmen 892, TaiwanThis paper presents an ultrawideband low-noise amplifier chip using TSMC 0.18 μm CMOS technology. We propose a UWB low noise amplifier (LNA) for low-voltage and low-power application. The present UWB LNA leads to a better performance in terms of isolation, chip size, and power consumption for low supply voltage. This UWB LNA is designed based on a current-reused topology, and a simplified RLC circuit is used to achieve the input broadband matching. Output impedance introduces the LC matching method to reduce power consumption. The measured results of the proposed LNA show an average power gain (S21) of 9 dB with the 3 dB band from 3 to 5.6 GHz. The input reflection coefficient (S11) less than −9 dB is from 3 to 11 GHz. The output reflection coefficient (S22) less than −8 dB is from 3 to 7.5 GHz. The noise figure 4.6–5.3 dB is from 3 to 5.6 GHz. Input third-order-intercept point (IIP3) of 2 dBm is at 5.3 GHz. The dc power consumption of this LNA is 9 mW under the supply of a 1 V supply voltage. The chip size of the CMOS UWB LNA is 1.03×0.78 mm2 in total.http://dx.doi.org/10.1155/2013/953498 |
| spellingShingle | Jun-Da Chen A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology Active and Passive Electronic Components |
| title | A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology |
| title_full | A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology |
| title_fullStr | A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology |
| title_full_unstemmed | A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology |
| title_short | A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology |
| title_sort | low power ultrawideband low noise amplifier in 0 18 μm cmos technology |
| url | http://dx.doi.org/10.1155/2013/953498 |
| work_keys_str_mv | AT jundachen alowpowerultrawidebandlownoiseamplifierin018mmcmostechnology AT jundachen lowpowerultrawidebandlownoiseamplifierin018mmcmostechnology |