Material Properties of Laser-Welded Thin Silicon Foils
An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar c...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/724502 |
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| _version_ | 1850216353628160000 |
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| author | M. T. Hessmann T. Kunz M. Voigt K. Cvecek M. Schmidt A. Bochmann S. Christiansen R. Auer C. J. Brabec |
| author_facet | M. T. Hessmann T. Kunz M. Voigt K. Cvecek M. Schmidt A. Bochmann S. Christiansen R. Auer C. J. Brabec |
| author_sort | M. T. Hessmann |
| collection | DOAJ |
| description | An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1) laser spot welding with low constant feed speed, (2) laser line welding, and (3) keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD) to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils. |
| format | Article |
| id | doaj-art-3edf77d8a221419c8da560c8ccd4e621 |
| institution | OA Journals |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-3edf77d8a221419c8da560c8ccd4e6212025-08-20T02:08:20ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/724502724502Material Properties of Laser-Welded Thin Silicon FoilsM. T. Hessmann0T. Kunz1M. Voigt2K. Cvecek3M. Schmidt4A. Bochmann5S. Christiansen6R. Auer7C. J. Brabec8Bavarian Center for Applied Energy Research (ZAE Bayern), Haberstraße 2a, 91058 Erlangen, GermanyBavarian Center for Applied Energy Research (ZAE Bayern), Haberstraße 2a, 91058 Erlangen, GermanyBavarian Center for Applied Energy Research (ZAE Bayern), Haberstraße 2a, 91058 Erlangen, GermanyBLZ-Bavarian Laser Center, Konrad-Zuse-Straße 2–6, 91052 Erlangen, GermanyBLZ-Bavarian Laser Center, Konrad-Zuse-Straße 2–6, 91052 Erlangen, GermanyUniversity of Applied Sciences Jena, Carl-Zeiss-Promenade 2, 07745 Jena, GermanyMax-Planck-Institute for the Science of Light, Günther-Scharowsky-Straße 1, 91058 Erlangen, GermanyBavarian Center for Applied Energy Research (ZAE Bayern), Haberstraße 2a, 91058 Erlangen, GermanyBavarian Center for Applied Energy Research (ZAE Bayern), Haberstraße 2a, 91058 Erlangen, GermanyAn extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1) laser spot welding with low constant feed speed, (2) laser line welding, and (3) keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD) to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.http://dx.doi.org/10.1155/2013/724502 |
| spellingShingle | M. T. Hessmann T. Kunz M. Voigt K. Cvecek M. Schmidt A. Bochmann S. Christiansen R. Auer C. J. Brabec Material Properties of Laser-Welded Thin Silicon Foils International Journal of Photoenergy |
| title | Material Properties of Laser-Welded Thin Silicon Foils |
| title_full | Material Properties of Laser-Welded Thin Silicon Foils |
| title_fullStr | Material Properties of Laser-Welded Thin Silicon Foils |
| title_full_unstemmed | Material Properties of Laser-Welded Thin Silicon Foils |
| title_short | Material Properties of Laser-Welded Thin Silicon Foils |
| title_sort | material properties of laser welded thin silicon foils |
| url | http://dx.doi.org/10.1155/2013/724502 |
| work_keys_str_mv | AT mthessmann materialpropertiesoflaserweldedthinsiliconfoils AT tkunz materialpropertiesoflaserweldedthinsiliconfoils AT mvoigt materialpropertiesoflaserweldedthinsiliconfoils AT kcvecek materialpropertiesoflaserweldedthinsiliconfoils AT mschmidt materialpropertiesoflaserweldedthinsiliconfoils AT abochmann materialpropertiesoflaserweldedthinsiliconfoils AT schristiansen materialpropertiesoflaserweldedthinsiliconfoils AT rauer materialpropertiesoflaserweldedthinsiliconfoils AT cjbrabec materialpropertiesoflaserweldedthinsiliconfoils |