Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications
The development of novel strain-engineered channel Cylindrical Gate-All-Around (CGAA) quantum well-barrier (QWB) field-effect transistors (FETs) using high-k gate stacks and metallic gates with varying work functions is analyzed, offering enhanced performance to meet the 1 nm technology node of IRDS...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10854207/ |
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