Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications
The development of novel strain-engineered channel Cylindrical Gate-All-Around (CGAA) quantum well-barrier (QWB) field-effect transistors (FETs) using high-k gate stacks and metallic gates with varying work functions is analyzed, offering enhanced performance to meet the 1 nm technology node of IRDS...
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IEEE
2025-01-01
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| author | Rasmita Barik Rudra Sankar Dhar Kuleen Kumar Yash Sharma Amit Banerjee |
| author_facet | Rasmita Barik Rudra Sankar Dhar Kuleen Kumar Yash Sharma Amit Banerjee |
| author_sort | Rasmita Barik |
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| description | The development of novel strain-engineered channel Cylindrical Gate-All-Around (CGAA) quantum well-barrier (QWB) field-effect transistors (FETs) using high-k gate stacks and metallic gates with varying work functions is analyzed, offering enhanced performance to meet the 1 nm technology node of IRDS 2028. The devices incorporate a QWB system incorporating strain engineering in the ultrathin channel region flanked by high-k spacers surrounding the underlaps and metal gate with a stack high-k dielectric. Key electrostatic characteristics, including the Ion/Ioff ratio, leakage current, on-current, sub-threshold swing (SS), drain-induced barrier lowering (DIBL), and transconductance, were extrapolated and analyzed for the CGAA FETs developed in this study. The tungsten metal gate device provides a significantly improved Ion/Ioff ratio with a notable 98.18% decrease in the off-current and 22.5% increase in the ON current, in contrast to existing cylindrical GAA FET. In addition, the novel strain-engineered channel CGAA QWB FET (Device C), which has a higher metal gate work function, is endorsed for near-optimal SS with augmented transconductance. The output performance (ID-V<inline-formula> <tex-math notation="LaTeX">$_{\mathrm {DS}}$ </tex-math></inline-formula>) resolves a huge enhancement in contrast to the existing GAA and IRDS 2028 1 nm technology node criteria. Hence, the device (nanowire-strained channel QWB CGAA FET) with a tungsten gate is better suited for low-power, high-speed applications with minimal short-channel effects, and is the device of future connecting numerous RF and digital applications as well as faster switching speed. |
| format | Article |
| id | doaj-art-3eb3a79a75a94c3690140066b3de3881 |
| institution | Kabale University |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
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| series | IEEE Access |
| spelling | doaj-art-3eb3a79a75a94c3690140066b3de38812025-01-31T23:05:05ZengIEEEIEEE Access2169-35362025-01-0113194691948310.1109/ACCESS.2025.353456110854207Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed ApplicationsRasmita Barik0https://orcid.org/0000-0001-9181-7371Rudra Sankar Dhar1https://orcid.org/0000-0002-6571-3808Kuleen Kumar2Yash Sharma3https://orcid.org/0009-0007-1277-9364Amit Banerjee4https://orcid.org/0000-0001-9612-4523Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl, IndiaDepartment of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl, IndiaDepartment of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl, IndiaGraduate School of Science and Technology, Shizuoka University, Hamamatsu, JapanPhysics Department, Microsystem Design-Integration Laboratory, Bidhan Chandra College, Asansol, West Bengal, IndiaThe development of novel strain-engineered channel Cylindrical Gate-All-Around (CGAA) quantum well-barrier (QWB) field-effect transistors (FETs) using high-k gate stacks and metallic gates with varying work functions is analyzed, offering enhanced performance to meet the 1 nm technology node of IRDS 2028. The devices incorporate a QWB system incorporating strain engineering in the ultrathin channel region flanked by high-k spacers surrounding the underlaps and metal gate with a stack high-k dielectric. Key electrostatic characteristics, including the Ion/Ioff ratio, leakage current, on-current, sub-threshold swing (SS), drain-induced barrier lowering (DIBL), and transconductance, were extrapolated and analyzed for the CGAA FETs developed in this study. The tungsten metal gate device provides a significantly improved Ion/Ioff ratio with a notable 98.18% decrease in the off-current and 22.5% increase in the ON current, in contrast to existing cylindrical GAA FET. In addition, the novel strain-engineered channel CGAA QWB FET (Device C), which has a higher metal gate work function, is endorsed for near-optimal SS with augmented transconductance. The output performance (ID-V<inline-formula> <tex-math notation="LaTeX">$_{\mathrm {DS}}$ </tex-math></inline-formula>) resolves a huge enhancement in contrast to the existing GAA and IRDS 2028 1 nm technology node criteria. Hence, the device (nanowire-strained channel QWB CGAA FET) with a tungsten gate is better suited for low-power, high-speed applications with minimal short-channel effects, and is the device of future connecting numerous RF and digital applications as well as faster switching speed.https://ieeexplore.ieee.org/document/10854207/CGAA FETtype-II band alignmentstrained siliconstrained SiGeballistic transportquantum well-barrier |
| spellingShingle | Rasmita Barik Rudra Sankar Dhar Kuleen Kumar Yash Sharma Amit Banerjee Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications IEEE Access CGAA FET type-II band alignment strained silicon strained SiGe ballistic transport quantum well-barrier |
| title | Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications |
| title_full | Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications |
| title_fullStr | Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications |
| title_full_unstemmed | Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications |
| title_short | Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications |
| title_sort | extrapolation of metal gate with high k spacer in strained nanosystem channel qwb cylindrical fet for high speed applications |
| topic | CGAA FET type-II band alignment strained silicon strained SiGe ballistic transport quantum well-barrier |
| url | https://ieeexplore.ieee.org/document/10854207/ |
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