Nitride thin films grown by thermal laser epitaxy

Nitride thin films grown by thermal laser epitaxy

The growth of a wide range of binary nitride films with excellent properties is reported. These films are deposited by thermal laser epitaxy (TLE). If equipped with CO2–laser substrate heating, TLE allows growth temperatures ≫ 1000 °C combined with strong nitriding conditions, which are established...

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Bibliographic Details
Main Authors: Dong Yeong Kim, Varun Harbola, Seungwon Jung, Jinjoo Lee, Sukanya Roy, Felix V. E. Hensling, Lena N. Majer, Hongguang Wang, Peter A. van Aken, Joao Marcelo J. Lopes, Neha Aggarwal, Jochen Mannhart, Wolfgang Braun
Format: Article
Language:English
Published: AIP Publishing LLC 2025-01-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0238169
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