Nitride thin films grown by thermal laser epitaxy
The growth of a wide range of binary nitride films with excellent properties is reported. These films are deposited by thermal laser epitaxy (TLE). If equipped with CO2–laser substrate heating, TLE allows growth temperatures ≫ 1000 °C combined with strong nitriding conditions, which are established...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0238169 |
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| author | Dong Yeong Kim Varun Harbola Seungwon Jung Jinjoo Lee Sukanya Roy Felix V. E. Hensling Lena N. Majer Hongguang Wang Peter A. van Aken Joao Marcelo J. Lopes Neha Aggarwal Jochen Mannhart Wolfgang Braun |
| author_facet | Dong Yeong Kim Varun Harbola Seungwon Jung Jinjoo Lee Sukanya Roy Felix V. E. Hensling Lena N. Majer Hongguang Wang Peter A. van Aken Joao Marcelo J. Lopes Neha Aggarwal Jochen Mannhart Wolfgang Braun |
| author_sort | Dong Yeong Kim |
| collection | DOAJ |
| description | The growth of a wide range of binary nitride films with excellent properties is reported. These films are deposited by thermal laser epitaxy (TLE). If equipped with CO2–laser substrate heating, TLE allows growth temperatures ≫ 1000 °C combined with strong nitriding conditions, which are established by using ammonia (NH3) gas as a nitrogen precursor. Films deposited on c-plane sapphire substrates include semiconducting nitrides (BN, AlN, ScN, and YN), superconducting nitrides (TiN, VN, ZrN, and NbN), and magnetic nitrides (CrN and GdN). The superconducting transition temperatures of TiN, VN, ZrN, and NbN films are 5.7, 8.9, 8.9, and 16.9 K, respectively. The Néel temperature of CrN films is ≃280 K, and the Curie temperature of GdN films is 66 K; both lie within the reported ranges. The controlled fabrication of different phases of individual nitride compounds is explored, revealing that subnitride phases can be grown at lower NH3 pressures. This study also demonstrates the heteroepitaxial growth of multilayer nitride films on c-plane sapphire. |
| format | Article |
| id | doaj-art-3ea405339fe846c3b92e231daedcad36 |
| institution | Kabale University |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-3ea405339fe846c3b92e231daedcad362025-02-03T16:42:31ZengAIP Publishing LLCAPL Materials2166-532X2025-01-01131011125011125-910.1063/5.0238169Nitride thin films grown by thermal laser epitaxyDong Yeong Kim0Varun Harbola1Seungwon Jung2Jinjoo Lee3Sukanya Roy4Felix V. E. Hensling5Lena N. Majer6Hongguang Wang7Peter A. van Aken8Joao Marcelo J. Lopes9Neha Aggarwal10Jochen Mannhart11Wolfgang Braun12Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyPaul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, GermanyPaul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, GermanyMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyThe growth of a wide range of binary nitride films with excellent properties is reported. These films are deposited by thermal laser epitaxy (TLE). If equipped with CO2–laser substrate heating, TLE allows growth temperatures ≫ 1000 °C combined with strong nitriding conditions, which are established by using ammonia (NH3) gas as a nitrogen precursor. Films deposited on c-plane sapphire substrates include semiconducting nitrides (BN, AlN, ScN, and YN), superconducting nitrides (TiN, VN, ZrN, and NbN), and magnetic nitrides (CrN and GdN). The superconducting transition temperatures of TiN, VN, ZrN, and NbN films are 5.7, 8.9, 8.9, and 16.9 K, respectively. The Néel temperature of CrN films is ≃280 K, and the Curie temperature of GdN films is 66 K; both lie within the reported ranges. The controlled fabrication of different phases of individual nitride compounds is explored, revealing that subnitride phases can be grown at lower NH3 pressures. This study also demonstrates the heteroepitaxial growth of multilayer nitride films on c-plane sapphire.http://dx.doi.org/10.1063/5.0238169 |
| spellingShingle | Dong Yeong Kim Varun Harbola Seungwon Jung Jinjoo Lee Sukanya Roy Felix V. E. Hensling Lena N. Majer Hongguang Wang Peter A. van Aken Joao Marcelo J. Lopes Neha Aggarwal Jochen Mannhart Wolfgang Braun Nitride thin films grown by thermal laser epitaxy APL Materials |
| title | Nitride thin films grown by thermal laser epitaxy |
| title_full | Nitride thin films grown by thermal laser epitaxy |
| title_fullStr | Nitride thin films grown by thermal laser epitaxy |
| title_full_unstemmed | Nitride thin films grown by thermal laser epitaxy |
| title_short | Nitride thin films grown by thermal laser epitaxy |
| title_sort | nitride thin films grown by thermal laser epitaxy |
| url | http://dx.doi.org/10.1063/5.0238169 |
| work_keys_str_mv | AT dongyeongkim nitridethinfilmsgrownbythermallaserepitaxy AT varunharbola nitridethinfilmsgrownbythermallaserepitaxy AT seungwonjung nitridethinfilmsgrownbythermallaserepitaxy AT jinjoolee nitridethinfilmsgrownbythermallaserepitaxy AT sukanyaroy nitridethinfilmsgrownbythermallaserepitaxy AT felixvehensling nitridethinfilmsgrownbythermallaserepitaxy AT lenanmajer nitridethinfilmsgrownbythermallaserepitaxy AT hongguangwang nitridethinfilmsgrownbythermallaserepitaxy AT peteravanaken nitridethinfilmsgrownbythermallaserepitaxy AT joaomarcelojlopes nitridethinfilmsgrownbythermallaserepitaxy AT nehaaggarwal nitridethinfilmsgrownbythermallaserepitaxy AT jochenmannhart nitridethinfilmsgrownbythermallaserepitaxy AT wolfgangbraun nitridethinfilmsgrownbythermallaserepitaxy |