Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors
Negative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been investigated. Here, we propose the gate-tunable...
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| Main Authors: | Shih-Hung Cheng, Ting-I Kuo, Er-Feng Hsieh, Wen-Jeng Hsueh |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379724007241 |
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