High-efficiency SOI-based metalenses at telecommunication wavelengths
We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize hig...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2022-10-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2022-0480 |
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