Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering
A new ion-beam sputtering technique for obtaining self-assembled InAs quantum dots on GaAs (001) substrates is proposed. The current paper demonstrates that a temperature increase in a range from 450 to 550°C at ion current of 120 μA and energy of 150 eV leads to an expansion of average sizes of InA...
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2016/5340218 |
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| author | S. N. Chebotarev A. S. Pashchenko V. A. Irkha M. L. Lunina |
| author_facet | S. N. Chebotarev A. S. Pashchenko V. A. Irkha M. L. Lunina |
| author_sort | S. N. Chebotarev |
| collection | DOAJ |
| description | A new ion-beam sputtering technique for obtaining self-assembled InAs quantum dots on GaAs (001) substrates is proposed. The current paper demonstrates that a temperature increase in a range from 450 to 550°C at ion current of 120 μA and energy of 150 eV leads to an expansion of average sizes of InAs hut-quantum dots. According to atomic force and electron microscopy, photoluminescence, and capacity-voltage measurements it was found that an increase of ion-beam current from 60 to 120 μA at a temperature of 500°C and energy of 150 eV slightly enlarges the average sizes of quantum dots from 15 nm to 18 nm while their dispersion is about 30%. At a current of 180 μA a surface density is 1.3·1011 cm−2, but under these conditions there is a very high dispersion of quantum dots up to 50%. |
| format | Article |
| id | doaj-art-3e36ac49acdc4adfab0c55f74977e565 |
| institution | Kabale University |
| issn | 1687-9503 1687-9511 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Nanotechnology |
| spelling | doaj-art-3e36ac49acdc4adfab0c55f74977e5652025-02-03T06:05:07ZengWileyJournal of Nanotechnology1687-95031687-95112016-01-01201610.1155/2016/53402185340218Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam SputteringS. N. Chebotarev0A. S. Pashchenko1V. A. Irkha2M. L. Lunina3Platov South-Russian State Polytechnic University (NPI), Prosvescheniya Street 132, Novocherkassk 346428, RussiaSouthern Scientific Center, Russian Academy of Sciences, Chekhova Street 41, Rostov-on-Don 344006, RussiaInversiya Special Design and Engineering Bureau, Zorge Street 7, Rostov-on-Don 344104, RussiaSouthern Scientific Center, Russian Academy of Sciences, Chekhova Street 41, Rostov-on-Don 344006, RussiaA new ion-beam sputtering technique for obtaining self-assembled InAs quantum dots on GaAs (001) substrates is proposed. The current paper demonstrates that a temperature increase in a range from 450 to 550°C at ion current of 120 μA and energy of 150 eV leads to an expansion of average sizes of InAs hut-quantum dots. According to atomic force and electron microscopy, photoluminescence, and capacity-voltage measurements it was found that an increase of ion-beam current from 60 to 120 μA at a temperature of 500°C and energy of 150 eV slightly enlarges the average sizes of quantum dots from 15 nm to 18 nm while their dispersion is about 30%. At a current of 180 μA a surface density is 1.3·1011 cm−2, but under these conditions there is a very high dispersion of quantum dots up to 50%.http://dx.doi.org/10.1155/2016/5340218 |
| spellingShingle | S. N. Chebotarev A. S. Pashchenko V. A. Irkha M. L. Lunina Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering Journal of Nanotechnology |
| title | Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering |
| title_full | Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering |
| title_fullStr | Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering |
| title_full_unstemmed | Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering |
| title_short | Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering |
| title_sort | morphology and optical investigations of inas qd gaas heterostructures obtained by ion beam sputtering |
| url | http://dx.doi.org/10.1155/2016/5340218 |
| work_keys_str_mv | AT snchebotarev morphologyandopticalinvestigationsofinasqdgaasheterostructuresobtainedbyionbeamsputtering AT aspashchenko morphologyandopticalinvestigationsofinasqdgaasheterostructuresobtainedbyionbeamsputtering AT vairkha morphologyandopticalinvestigationsofinasqdgaasheterostructuresobtainedbyionbeamsputtering AT mllunina morphologyandopticalinvestigationsofinasqdgaasheterostructuresobtainedbyionbeamsputtering |