p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation
The p-type quasi-mono wafer is a novel type of silicon material that is processed using a seed directional solidification technique. This material is a promising alternative to traditional high-cost Czochralski (CZ) and float-zone (FZ) material. Here, we evaluate the application of an advanced solar...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/171390 |
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| _version_ | 1832549988798824448 |
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| author | Chien-Ming Lee Sheng-Po Chang Shoou-Jinn Chang Ching-In Wu |
| author_facet | Chien-Ming Lee Sheng-Po Chang Shoou-Jinn Chang Ching-In Wu |
| author_sort | Chien-Ming Lee |
| collection | DOAJ |
| description | The p-type quasi-mono wafer is a novel type of silicon material that is processed using a seed directional solidification technique. This material is a promising alternative to traditional high-cost Czochralski (CZ) and float-zone (FZ) material. Here, we evaluate the application of an advanced solar cell process featuring a novel method of ion implantation on p-type quasi-mono silicon wafer. The ion implantation process has simplified the normal industrial process flow by eliminating two process steps: the removal of phosphosilicate glass (PSG) and the junction isolation process that is required after the conventional thermal POCl3 diffusion process. Moreover, the good passivation performance of the ion implantation process improves Voc. Our results show that, after metallization and cofiring, an average cell efficiency of 18.55% can be achieved using 156 × 156 mm p-type quasi-mono silicon wafer. Furthermore, the absolute cell efficiency obtained using this method is 0.47% higher than that for the traditional POCl3 diffusion process. |
| format | Article |
| id | doaj-art-3d1692ce160c4da5b3c22bedf3baa12a |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-3d1692ce160c4da5b3c22bedf3baa12a2025-02-03T06:07:59ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/171390171390p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion ImplantationChien-Ming Lee0Sheng-Po Chang1Shoou-Jinn Chang2Ching-In Wu3Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, TaiwanInstitute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, TaiwanInstitute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, TaiwanInventec Solar Energy Corporation, Taoyuan 335, TaiwanThe p-type quasi-mono wafer is a novel type of silicon material that is processed using a seed directional solidification technique. This material is a promising alternative to traditional high-cost Czochralski (CZ) and float-zone (FZ) material. Here, we evaluate the application of an advanced solar cell process featuring a novel method of ion implantation on p-type quasi-mono silicon wafer. The ion implantation process has simplified the normal industrial process flow by eliminating two process steps: the removal of phosphosilicate glass (PSG) and the junction isolation process that is required after the conventional thermal POCl3 diffusion process. Moreover, the good passivation performance of the ion implantation process improves Voc. Our results show that, after metallization and cofiring, an average cell efficiency of 18.55% can be achieved using 156 × 156 mm p-type quasi-mono silicon wafer. Furthermore, the absolute cell efficiency obtained using this method is 0.47% higher than that for the traditional POCl3 diffusion process.http://dx.doi.org/10.1155/2013/171390 |
| spellingShingle | Chien-Ming Lee Sheng-Po Chang Shoou-Jinn Chang Ching-In Wu p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation International Journal of Photoenergy |
| title | p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation |
| title_full | p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation |
| title_fullStr | p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation |
| title_full_unstemmed | p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation |
| title_short | p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation |
| title_sort | p type quasi mono silicon solar cell fabricated by ion implantation |
| url | http://dx.doi.org/10.1155/2013/171390 |
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