APA (7th ed.) Citation

Yin, J., Liao, W., & Chen, C. A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node. Wiley.

Chicago Style (17th ed.) Citation

Yin, Jiayu, Wenli Liao, and Chengying Chen. A 0.9 V, 8T2R NvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node. Wiley.

MLA (9th ed.) Citation

Yin, Jiayu, et al. A 0.9 V, 8T2R NvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node. Wiley.