Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate

Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate

Abstract As the representative of substrate material, gallium nitride (GaN) has excellent mechanical properties and high thermal stability. Achieving high surface flatness is critical for subsequent epitaxial growth and device fabrication processes. Chemical mechanical polishing (CMP) technique of G...

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Bibliographic Details
Main Authors: Xuanyi Zhao, Shouzhi Wang, Lei Liu, Qiubo Li, Jiaoxian Yu, Guodong Wang, Chang Liang, Zhongxin Wang, Han Hao, Xiangang Xu, Lei Zhang
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Materials Interfaces
Subjects:
assisted enhanced CMP
CMP
GaN
sustainable development
Online Access:https://doi.org/10.1002/admi.202301032
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