Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate
Abstract As the representative of substrate material, gallium nitride (GaN) has excellent mechanical properties and high thermal stability. Achieving high surface flatness is critical for subsequent epitaxial growth and device fabrication processes. Chemical mechanical polishing (CMP) technique of G...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202301032 |
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| author | Xuanyi Zhao Shouzhi Wang Lei Liu Qiubo Li Jiaoxian Yu Guodong Wang Chang Liang Zhongxin Wang Han Hao Xiangang Xu Lei Zhang |
| author_facet | Xuanyi Zhao Shouzhi Wang Lei Liu Qiubo Li Jiaoxian Yu Guodong Wang Chang Liang Zhongxin Wang Han Hao Xiangang Xu Lei Zhang |
| author_sort | Xuanyi Zhao |
| collection | DOAJ |
| description | Abstract As the representative of substrate material, gallium nitride (GaN) has excellent mechanical properties and high thermal stability. Achieving high surface flatness is critical for subsequent epitaxial growth and device fabrication processes. Chemical mechanical polishing (CMP) technique of GaN is commonly one of the most effective ways to achieve atomically smooth surfaces. However, the current process is difficult to meet the needs of industrial development due to the characteristics of low material removal rate. Assisted enhanced CMP technique is deemed to possess significant potential due to its improved processing efficiency and surface topography quality. Herein, a variety of auxiliary enhanced CMP systems are designed and studied. In this review, recent advances both in conventional and assisted enhanced CMP of GaN are comprehensive presented, with a focus on their potential applications in various fields. The mechanism and design strategy of the process are discussed and summarized. The key issues in machining atomically flattened surface are outlined, and future strategies for sustainable development are also proposed. This review provides a novel perspective on GaN processing and offers more inspiration for future research to realize its development and commercial application. |
| format | Article |
| id | doaj-art-3a5278c8a4e644859534009c411f90ca |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-3a5278c8a4e644859534009c411f90ca2025-01-20T13:56:18ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-01-01122n/an/a10.1002/admi.202301032Advance Chemical Mechanical Polishing Technique for Gallium Nitride SubstrateXuanyi Zhao0Shouzhi Wang1Lei Liu2Qiubo Li3Jiaoxian Yu4Guodong Wang5Chang Liang6Zhongxin Wang7Han Hao8Xiangang Xu9Lei Zhang10Institute of Novel Semiconductors State Key laboratory of Crystal Material Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key laboratory of Crystal Material Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key laboratory of Crystal Material Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key laboratory of Crystal Material Shandong University Jinan 250100 P. R. ChinaKey Laboratory of Processing and Testing Technology of Glass & Functional Ceramics of Shandong, Province, School of Materials Science and Engineering Qilu University of Technology (Shandong Academy of Sciences) Jinan 250353 P. R. ChinaInstitute of Novel Semiconductors State Key laboratory of Crystal Material Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key laboratory of Crystal Material Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key laboratory of Crystal Material Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key laboratory of Crystal Material Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key laboratory of Crystal Material Shandong University Jinan 250100 P. R. ChinaInstitute of Novel Semiconductors State Key laboratory of Crystal Material Shandong University Jinan 250100 P. R. ChinaAbstract As the representative of substrate material, gallium nitride (GaN) has excellent mechanical properties and high thermal stability. Achieving high surface flatness is critical for subsequent epitaxial growth and device fabrication processes. Chemical mechanical polishing (CMP) technique of GaN is commonly one of the most effective ways to achieve atomically smooth surfaces. However, the current process is difficult to meet the needs of industrial development due to the characteristics of low material removal rate. Assisted enhanced CMP technique is deemed to possess significant potential due to its improved processing efficiency and surface topography quality. Herein, a variety of auxiliary enhanced CMP systems are designed and studied. In this review, recent advances both in conventional and assisted enhanced CMP of GaN are comprehensive presented, with a focus on their potential applications in various fields. The mechanism and design strategy of the process are discussed and summarized. The key issues in machining atomically flattened surface are outlined, and future strategies for sustainable development are also proposed. This review provides a novel perspective on GaN processing and offers more inspiration for future research to realize its development and commercial application.https://doi.org/10.1002/admi.202301032assisted enhanced CMPCMPGaNsustainable development |
| spellingShingle | Xuanyi Zhao Shouzhi Wang Lei Liu Qiubo Li Jiaoxian Yu Guodong Wang Chang Liang Zhongxin Wang Han Hao Xiangang Xu Lei Zhang Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate Advanced Materials Interfaces assisted enhanced CMP CMP GaN sustainable development |
| title | Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate |
| title_full | Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate |
| title_fullStr | Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate |
| title_full_unstemmed | Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate |
| title_short | Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate |
| title_sort | advance chemical mechanical polishing technique for gallium nitride substrate |
| topic | assisted enhanced CMP CMP GaN sustainable development |
| url | https://doi.org/10.1002/admi.202301032 |
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