A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation
Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate for universal memory that may replace traditional memory forms. It is expected to provide high-speed operation, scalability, low-power dissipation, and high endurance. MRAM switching technology has e...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2016-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2016/3858621 |
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