A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation
Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate for universal memory that may replace traditional memory forms. It is expected to provide high-speed operation, scalability, low-power dissipation, and high endurance. MRAM switching technology has e...
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2016/3858621 |
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| author | Hyein Lim Seungjun Lee Hyungsoon Shin |
| author_facet | Hyein Lim Seungjun Lee Hyungsoon Shin |
| author_sort | Hyein Lim |
| collection | DOAJ |
| description | Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate for universal memory that may replace traditional memory forms. It is expected to provide high-speed operation, scalability, low-power dissipation, and high endurance. MRAM switching technology has evolved from the field-induced magnetic switching (FIMS) technique to the spin-transfer torque (STT) switching technique. Additionally, material technology that induces perpendicular magnetic anisotropy (PMA) facilitates low-power operation through the reduction of the switching current density. In this paper, the modeling of magnetic tunnel junctions (MTJs) is reviewed. Modeling methods and models of MTJ characteristics are classified into two groups, macromodels and behavioral models, and the most important characteristics of MTJs, the voltage-dependent MTJ resistance and the switching behavior, are compared. To represent the voltage dependency of MTJ resistance, some models are based on physical mechanisms, such as Landau-Lifshitz-Gilbert (LLG) equation or voltage-dependent conductance. Some behavioral models are constructed by adding fitting parameters or introducing new physical parameters to represent the complex switching behavior of an MTJ over a wide range of input current conditions. Other models that are not based on physical mechanisms are implemented by simply fitting to experimental data. |
| format | Article |
| id | doaj-art-398302bf1f2c4df7ba2bd5eb907815e7 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-398302bf1f2c4df7ba2bd5eb907815e72025-02-03T07:26:11ZengWileyActive and Passive Electronic Components0882-75161563-50312016-01-01201610.1155/2016/38586213858621A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit SimulationHyein Lim0Seungjun Lee1Hyungsoon Shin2Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-Dong, Seodaemoon-Gu, Seoul 120-750, Republic of KoreaDepartment of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-Dong, Seodaemoon-Gu, Seoul 120-750, Republic of KoreaDepartment of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-Dong, Seodaemoon-Gu, Seoul 120-750, Republic of KoreaSpin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate for universal memory that may replace traditional memory forms. It is expected to provide high-speed operation, scalability, low-power dissipation, and high endurance. MRAM switching technology has evolved from the field-induced magnetic switching (FIMS) technique to the spin-transfer torque (STT) switching technique. Additionally, material technology that induces perpendicular magnetic anisotropy (PMA) facilitates low-power operation through the reduction of the switching current density. In this paper, the modeling of magnetic tunnel junctions (MTJs) is reviewed. Modeling methods and models of MTJ characteristics are classified into two groups, macromodels and behavioral models, and the most important characteristics of MTJs, the voltage-dependent MTJ resistance and the switching behavior, are compared. To represent the voltage dependency of MTJ resistance, some models are based on physical mechanisms, such as Landau-Lifshitz-Gilbert (LLG) equation or voltage-dependent conductance. Some behavioral models are constructed by adding fitting parameters or introducing new physical parameters to represent the complex switching behavior of an MTJ over a wide range of input current conditions. Other models that are not based on physical mechanisms are implemented by simply fitting to experimental data.http://dx.doi.org/10.1155/2016/3858621 |
| spellingShingle | Hyein Lim Seungjun Lee Hyungsoon Shin A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation Active and Passive Electronic Components |
| title | A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation |
| title_full | A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation |
| title_fullStr | A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation |
| title_full_unstemmed | A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation |
| title_short | A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation |
| title_sort | survey on the modeling of magnetic tunnel junctions for circuit simulation |
| url | http://dx.doi.org/10.1155/2016/3858621 |
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