EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS
The efficient electroluminescence in the region of band-to-band (1,1 eV) and dislocationrelated (D1 – 0,8 eV) transitions has been detected from Si p-n structures at room and liquid nitrogen temperatures. It was found that dislocation-related luminescence in Si single crystals is considerably strong...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Belarusian National Technical University
2015-03-01
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| Series: | Приборы и методы измерений |
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| Online Access: | https://pimi.bntu.by/jour/article/view/59 |
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| author | A. V. Mudryi V. D. Zhivulko F. Mofidnakhaei G. D. Ivlev M. V. Yakushev R. W. Martin A. V. Dvurechenskii V. A. Zinovyev Zh. V. Smagina P. A. Kuchinskaja |
| author_facet | A. V. Mudryi V. D. Zhivulko F. Mofidnakhaei G. D. Ivlev M. V. Yakushev R. W. Martin A. V. Dvurechenskii V. A. Zinovyev Zh. V. Smagina P. A. Kuchinskaja |
| author_sort | A. V. Mudryi |
| collection | DOAJ |
| description | The efficient electroluminescence in the region of band-to-band (1,1 eV) and dislocationrelated (D1 – 0,8 eV) transitions has been detected from Si p-n structures at room and liquid nitrogen temperatures. It was found that dislocation-related luminescence in Si single crystals is considerably stronger than the intrinsic band-to-band emission in the wide temperature range of 4,2–300 K. The temperature dependent measurement of the D1 photoluminescence intensity shows that two energy levels placed below the conduction (0,04 eV) and above valence (0,32 eV) bands are responsible for this radiative recombination on dislocations. |
| format | Article |
| id | doaj-art-393468440e0a41e78c0dfb41243de808 |
| institution | Kabale University |
| issn | 2220-9506 2414-0473 |
| language | English |
| publishDate | 2015-03-01 |
| publisher | Belarusian National Technical University |
| record_format | Article |
| series | Приборы и методы измерений |
| spelling | doaj-art-393468440e0a41e78c0dfb41243de8082025-02-03T11:37:44ZengBelarusian National Technical UniversityПриборы и методы измерений2220-95062414-04732015-03-0101384550EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONSA. V. Mudryi0V. D. Zhivulko1F. Mofidnakhaei2G. D. Ivlev3M. V. Yakushev4R. W. Martin5A. V. Dvurechenskii6V. A. Zinovyev7Zh. V. Smagina8P. A. Kuchinskaja9Scientific-Practical Material Research Centre of NAS of Belarus, MinskScientific-Practical Material Research Centre of NAS of Belarus, MinskScientific-Practical Material Research Centre of NAS of Belarus, MinskBelarusian State UniversityUnuiversity of Strathclyde, GlasgowUnuiversity of Strathclyde, GlasgowRzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, NovosibirskRzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, NovosibirskRzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, NovosibirskRzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, NovosibirskThe efficient electroluminescence in the region of band-to-band (1,1 eV) and dislocationrelated (D1 – 0,8 eV) transitions has been detected from Si p-n structures at room and liquid nitrogen temperatures. It was found that dislocation-related luminescence in Si single crystals is considerably stronger than the intrinsic band-to-band emission in the wide temperature range of 4,2–300 K. The temperature dependent measurement of the D1 photoluminescence intensity shows that two energy levels placed below the conduction (0,04 eV) and above valence (0,32 eV) bands are responsible for this radiative recombination on dislocations.https://pimi.bntu.by/jour/article/view/59silicon p-n structurescurrent-voltage characteristicsdislocationselectroluminescence |
| spellingShingle | A. V. Mudryi V. D. Zhivulko F. Mofidnakhaei G. D. Ivlev M. V. Yakushev R. W. Martin A. V. Dvurechenskii V. A. Zinovyev Zh. V. Smagina P. A. Kuchinskaja EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS Приборы и методы измерений silicon p-n structures current-voltage characteristics dislocations electroluminescence |
| title | EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS |
| title_full | EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS |
| title_fullStr | EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS |
| title_full_unstemmed | EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS |
| title_short | EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS |
| title_sort | effective silicon device structures with radiative recombination on dislocations |
| topic | silicon p-n structures current-voltage characteristics dislocations electroluminescence |
| url | https://pimi.bntu.by/jour/article/view/59 |
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