Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positi...

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Bibliographic Details
Main Authors: Muhammad Aslam, Shu-Wei Chang, Min-Hui Chuang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Open Journal of Nanotechnology
Subjects:
a-IGZO TFT
positive bias temperature stress (PBTS)
negative bias temperature stress (NBTS)
high-κ HfO<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_2$</tex-math> </inline-formula> </named-content>
oxide semiconductor (OS)
atomic layer deposition (ALD)
Online Access:https://ieeexplore.ieee.org/document/10494359/
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