Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress
Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positi...
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IEEE
2024-01-01
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| Series: | IEEE Open Journal of Nanotechnology |
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| Online Access: | https://ieeexplore.ieee.org/document/10494359/ |
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| author | Muhammad Aslam Shu-Wei Chang Min-Hui Chuang Yi-Ho Chen Yao-Jen Lee Yiming Li |
| author_facet | Muhammad Aslam Shu-Wei Chang Min-Hui Chuang Yi-Ho Chen Yao-Jen Lee Yiming Li |
| author_sort | Muhammad Aslam |
| collection | DOAJ |
| description | Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive V<sub>th</sub> shift to negative V<sub>th</sub> shift (ΔV<sub>th</sub>, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔV<sub>th</sub> shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔV<sub>th</sub> shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results. |
| format | Article |
| id | doaj-art-391eed6e6b14405ca2a88201290c828e |
| institution | Kabale University |
| issn | 2644-1292 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
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| series | IEEE Open Journal of Nanotechnology |
| spelling | doaj-art-391eed6e6b14405ca2a88201290c828e2025-01-24T00:02:21ZengIEEEIEEE Open Journal of Nanotechnology2644-12922024-01-01591610.1109/OJNANO.2024.338612310494359Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias StressMuhammad Aslam0https://orcid.org/0009-0009-3173-6516Shu-Wei Chang1https://orcid.org/0000-0002-2555-5622Min-Hui Chuang2Yi-Ho Chen3https://orcid.org/0000-0002-7941-6193Yao-Jen Lee4https://orcid.org/0000-0001-9643-111XYiming Li5https://orcid.org/0000-0001-7374-0964Parallel and Scientific Computing Laboratory, National Yang Ming Chiao Tung University, Hsinchu, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanParallel and Scientific Computing Laboratory, National Yang Ming Chiao Tung University, Hsinchu, TaiwanParallel and Scientific Computing Laboratory, National Yang Ming Chiao Tung University, Hsinchu, TaiwanInstitute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu, TaiwanParallel and Scientific Computing Laboratory, National Yang Ming Chiao Tung University, Hsinchu, TaiwanRecently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive V<sub>th</sub> shift to negative V<sub>th</sub> shift (ΔV<sub>th</sub>, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔV<sub>th</sub> shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔV<sub>th</sub> shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results.https://ieeexplore.ieee.org/document/10494359/a-IGZO TFTpositive bias temperature stress (PBTS)negative bias temperature stress (NBTS)high-κ HfO<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_2$</tex-math> </inline-formula> </named-content>oxide semiconductor (OS)atomic layer deposition (ALD) |
| spellingShingle | Muhammad Aslam Shu-Wei Chang Min-Hui Chuang Yi-Ho Chen Yao-Jen Lee Yiming Li Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress IEEE Open Journal of Nanotechnology a-IGZO TFT positive bias temperature stress (PBTS) negative bias temperature stress (NBTS) high-κ HfO<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_2$</tex-math> </inline-formula> </named-content> oxide semiconductor (OS) atomic layer deposition (ALD) |
| title | Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress |
| title_full | Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress |
| title_fullStr | Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress |
| title_full_unstemmed | Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress |
| title_short | Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress |
| title_sort | temperature dependent hydrogen modulations of ultra scaled a igzo thin film transistor under gate bias stress |
| topic | a-IGZO TFT positive bias temperature stress (PBTS) negative bias temperature stress (NBTS) high-κ HfO<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_2$</tex-math> </inline-formula> </named-content> oxide semiconductor (OS) atomic layer deposition (ALD) |
| url | https://ieeexplore.ieee.org/document/10494359/ |
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