Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow Cathode

Carbon diamond-like thin films on a silicon substrate were deposited by direct reactive ion beam method with an ion source based on Penning direct-current discharge system with cold hollow cathode. Deposition was performed under various conditions. The pressure (12–200 mPa) and the plasma-forming ga...

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Main Authors: E. F. Shevchenko, V. A. Tarala, M. Yu. Shevchenko, A. A. Titarenko
Format: Article
Language:English
Published: Wiley 2014-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2014/979450
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author E. F. Shevchenko
V. A. Tarala
M. Yu. Shevchenko
A. A. Titarenko
author_facet E. F. Shevchenko
V. A. Tarala
M. Yu. Shevchenko
A. A. Titarenko
author_sort E. F. Shevchenko
collection DOAJ
description Carbon diamond-like thin films on a silicon substrate were deposited by direct reactive ion beam method with an ion source based on Penning direct-current discharge system with cold hollow cathode. Deposition was performed under various conditions. The pressure (12–200 mPa) and the plasma-forming gas composition consisting of different organic compounds and hydrogen (C3H8, CH4, Si(CH3)2Cl2, H2), the voltage of accelerating gap in the range 0.5–5 kV, and the substrate temperature in the range 20–850°C were varied. Synthesized films were researched using nanoindentation, Raman, and FTIR spectroscopy methods. Analysis of the experimental results was made in accordance with a developed model describing processes of growth of the amorphous and crystalline carbon materials.
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institution Kabale University
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spelling doaj-art-3919f9a6cf48496096a895712b5682be2025-02-03T06:01:11ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/979450979450Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow CathodeE. F. Shevchenko0V. A. Tarala1M. Yu. Shevchenko2A. A. Titarenko3Scientific Educational Center of Nanotechnologies, North-Caucasus Federal University, Stavropol 355029, RussiaSouthern Scientific Center of Russian Academy of Sciences, Rostov-on-Don 344006, RussiaScientific Educational Center of Nanotechnologies, North-Caucasus Federal University, Stavropol 355029, RussiaScientific Educational Center of Nanotechnologies, North-Caucasus Federal University, Stavropol 355029, RussiaCarbon diamond-like thin films on a silicon substrate were deposited by direct reactive ion beam method with an ion source based on Penning direct-current discharge system with cold hollow cathode. Deposition was performed under various conditions. The pressure (12–200 mPa) and the plasma-forming gas composition consisting of different organic compounds and hydrogen (C3H8, CH4, Si(CH3)2Cl2, H2), the voltage of accelerating gap in the range 0.5–5 kV, and the substrate temperature in the range 20–850°C were varied. Synthesized films were researched using nanoindentation, Raman, and FTIR spectroscopy methods. Analysis of the experimental results was made in accordance with a developed model describing processes of growth of the amorphous and crystalline carbon materials.http://dx.doi.org/10.1155/2014/979450
spellingShingle E. F. Shevchenko
V. A. Tarala
M. Yu. Shevchenko
A. A. Titarenko
Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow Cathode
Advances in Materials Science and Engineering
title Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow Cathode
title_full Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow Cathode
title_fullStr Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow Cathode
title_full_unstemmed Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow Cathode
title_short Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow Cathode
title_sort diamond like carbon film deposition using dc ion source with cold hollow cathode
url http://dx.doi.org/10.1155/2014/979450
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